Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices

  • Gaoqiang Deng
  • Yuantao ZhangEmail author
  • Pengchong Li
  • Ye Yu
  • Xu Han
  • Liang Chen
  • Long Yan
  • Xin Dong
  • Degang Zhao
  • Guotong Du


In this work, a near-ultraviolet (380 nm) double Al0.2Ga0.8N/GaN distributed Bragg reflectors (DBRs) stack mirror was designed and fabricated. The double DBRs stack mirror consists of a 30-pair Al0.2Ga0.8N/GaN DBRs centered at 375 nm and a 20-pair Al0.2Ga0.8N/GaN DBRs centered at 385 nm. Our simulation results show that the method of double DBRs stack mirror design can broaden the stopband width greatly and increase the reflected angle efficiently, compared with the single Al0.2Ga0.8N/GaN DBRs mirror. In experiment, the double Al0.2Ga0.8N/GaN DBRs stack mirror and the reference Al0.2Ga0.8N/GaN DBRs mirror were grown on sapphire substrate by metalorganic chemical vapor deposition. The measured stopband width of the double DBRs stack mirror (~ 25 nm) is more than two times that of the reference DBRs mirror (~ 11 nm), which consists well with our simulation results. It is reasonable to believe that this work could provide a valuable information to obtain AlGaN/GaN DBRs with wide stopband width that can be used in the fabrication of GaN-based resonant cavity light-emitting diodes and vertical cavity surface emitting lasers.



This work was supported by the National Key Research and Development Program (Grant No. 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674068 and 61734001), the Science and Technology Developing Project of Jilin Province (Grant Nos. 20150519004JH, 20160101309JC, and 20170204045GX).


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Authors and Affiliations

  1. 1.State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and EngineeringJilin UniversityChangchunChina
  2. 2.State Key Laboratory of Integrated Optoelectronics, Institute of SemiconductorsChinese Academy of ScienceBeijingChina

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