Bipolar resistive switching with coexistence of mem-elements in the spray deposited CoFe2O4 thin film
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In the present investigation, we have experimentally demonstrated the bipolar resistive switching with the coexistence of three fundamental memelements in the Ag/CoFe2O4/FTO thin film metal-insulator-metal (MIM) device. The device shows the analog resistive switching behavior and charge transport follows the Ohmic and space charge limited conduction (SCLC) mechanisms. The device transforms from asymmetric to symmetric resistive switching when the SCLC conduction mechanism change to the Ohmic conduction mechanism at higher voltage sweep rates. It was observed that the I–V crossing location of MIM device shifted towards the higher voltage range with increasing voltage sweep rates for both bias regions due to the nanobattery effect. The significant tunneling gap between immature conductive filament(s) and percolation channels was responsible for the coexistence of memelements and nanobattery effect in the Ag/CoFe2O4/FTO thin film MIM device.
The authors extend their appreciation to the Staff and Students of Physics Instrumentation Facility Centre (PIFC), Shivaji University, Kolhapur for valuable discussion and characterizations.
- 8.R.E. Meade, G.S. Sandhu, U.S. Patent No. 8,867,261. (U.S. Patent and Trademark Office, Washington, DC, 2014)Google Scholar