Study on the optical properties of β-Ga2O3 films grown by MOCVD
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Abstract
β-Ga2O3 films were grown on c-plane sapphire substrates at different substrate temperatures by metal-organic chemical vapor deposition. The effects of substrate temperature on transparence, optical band gap and photoluminescence of the films were studied systematically. With increasing the substrate temperature, the films structure was changed from amorphous to single orientation β-Ga2O3. The β-Ga2O3 films exhibited excellent optical transparency in the ultraviolet and visible regions. The ultraviolet-blue photoluminescence was observed at room temperature. The temperature-dependent photoluminescence was also carried out and the relative intensity of the blue emission with respect to the ultraviolet emission decreased with increasing the measured temperature. The origin of luminescence was discussed.
Keywords
Substrate Temperature Ga2O3 Crystal Quality Blue Emission Ga2O3 FilmNotes
Acknowledgements
This work was supported by the National Natural Science Foundation of China (Nos. 61376046 and 61674068), the National Key Research and Development Program (No. 2016YFB0401801), the Science and Technology Developing Project of Jilin Province (20150519004JH, 20160101309JC, 20170204045GX), and the Program for New Century Excellent Talents in University (NCET-13-0254).
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