Abstract
Unlike traditional approach to improve photoresponse performance of ZnO-based optoelectronic devices, a ultra-low temperature solvothermal process was utilized to prepare reduced graphene oxide (rGO)/ZnO nanocomposites, which realized non-surfactant in-situ preparation of rGO/ZnO nanocomposites with the reduction of graphene oxide (GO) at the low temperature process (<170 °C). The effect of annealing process on the microsturcture and photoelectronic properties of rGO/ZnO nanocomposites and pure ZnO was investigated. The diameter of as-synthesized ZnO nanocrystal in GO/ZnO precursor was about 6.5 nm. The Fourier transform infrared (FTIR) and Raman spectrum results showed that graphene oxide in the precursor has been reduced to rGO. When annealing at a mild temperature below 170 °C, the optimum photocurrent of rGO/ZnO nanocomposites was about 4.5 times compared to pure ZnO, and the corresponding detectivity reached 6.39 × 1010 Jones. The advantage of the low temperature in-situ technic provides an avenue to fabricate high-performance and low-cost optoelectronic devices.
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Acknowledgements
The present study was supported by the National Nature Science Foundation of China (0204182087). We acknowledge the Analytical and Testing Center of Huazhong University of Science and Technology for characterizations of our samples. We specially thank associate professor Liu Huan at Huazhong University of Science and Technology for providing the preparation conditions and equipments of nanocomposites materials. And we sincerely thank professor Tang Jiang at Huazhong University of Science and Technology to provide a semiconductor device analyzer for our testing.
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Liu, S., Li, B., Kan, H. et al. Low temperature in-situ preparation of reduced graphene oxide/ZnO nanocomposites for highly sensitive photodetectors. J Mater Sci: Mater Electron 28, 9403–9409 (2017). https://doi.org/10.1007/s10854-017-6681-4
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DOI: https://doi.org/10.1007/s10854-017-6681-4