In this study, the effect of Bi2O3 doping on microstructure and electrical properties of ZnO–V2O5–Mn3O4 semiconducting ceramics was investigated through the sintering temperature as low as 825 °C. Analysis of the microstructure revealed that ZnO–V2O5–Mn3O4–Bi2O3 ceramics consisted of major ZnO grain, and minor such as Zn3(VO4)2, ZnV2O4, VO2, and BiVO4. As the amount of Bi2O3 increased, the densities of sintered pellets increased from 5.55 to 5.46 g/cm3, and the average grain size decreased from 5.6 to 3.9 μm until the amount of Bi2O3 reaches 0.05 mol%. The breakdown field increased from 4835 to 10,317 V/cm until the amount of Bi2O3 reaches 0.025 mol%. The highest nonlinear coefficient was obtained at the ceramics doped with 0.025 mol%, reaching 46.6. The dielectric constant decreased from 1324.5 to 544.7, and dissipation factor decreased from 0.506 to 0.176, until the amount of Bi2O3 reaches 0.05 mol%.
Mn3O4 V2O5 Bi2O3 BiVO4 Leakage Current Density
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