Advertisement

Dielectric and impedance spectroscopy of Ni doped BiFeO3-BaTiO3 electronic system

  • S. N. Das
  • A. Pattanaik
  • S. Kadambini
  • S. Pradhan
  • S. BhuyanEmail author
  • R. N. P. Choudhary
Article

Abstract

A nickel modified BiFeO3–BaTiO3 electronic system has been fabricated by using a high-temperature solid-state reaction process. Preliminary X-ray structural analysis has confirmed the formation of a single-phase material in the orthorhombic crystal system. The dielectric and impedance characteristics of the prepared material have been studied in a wide range of frequency (1 kHz-1 MHz) at different temperatures (25–500 °C) for the better understanding of the frequency-temperature dependence of its capacitive and resistive behavior respectively. A significant effect of grains and grain boundaries of the resistive characteristics of the material is observed at high temperatures. The electrical conductivity of the material increases with increase in frequency in the low-temperature region. Preliminary study of a small amount of Ni doping in the above binary system (i.e., BiFeO3–BaTiO3) has provided many interesting results which may be useful for the fabrication of an electronic device.

Keywords

BaTiO3 Tangent Loss BiFeO3 Barium Titanate Barium Titanate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

The authors are thankful to Professor S. K. Sharma of Indian School of Mines, Dhanbad, India for his help in X-ray data.

References

  1. 1.
    H. Schmid, Ferroelectrics 162, 317 (1994)CrossRefGoogle Scholar
  2. 2.
    W. Eerenstein, N.D. Mathur, J.F. Scott, Nature London 442, 759 (2006)CrossRefGoogle Scholar
  3. 3.
    M.M. Kumar, V.R. Palkar, K. Srinivas, S.V. Suryanarayana, Appl. Phys. Lett. 76, 2764 (2000)CrossRefGoogle Scholar
  4. 4.
    Y.P. Wang, L. Zhou, M.F. Zhang, X.Y. Chen, J.M. Liu, Z.G. Liu, Appl. Phys. Lett. 84, 1731 (2004)CrossRefGoogle Scholar
  5. 5.
    G.S. Lotey, N.K. Verma, Struct. J. Nanopart. Res. 14, 742 (2012)CrossRefGoogle Scholar
  6. 6.
    S. Pattanayak, R.N.P. Choudhary, P.R. Das, J. Electronic. Mater. 43, 470 (2014)CrossRefGoogle Scholar
  7. 7.
    S. Shankar, M. Kumar, A.K. Ghosh, O.P. Thakur, J. Mater. Sci. Mater. Electron. 25, 4896 (2014)CrossRefGoogle Scholar
  8. 8.
    L.Y. Wang, D.H. Wang, H.B. Huang, Z.D. Han, Q.Q. Coa, Bx Gu, Y. W. du. J. Alloys Compd. 469, 1 (2009)CrossRefGoogle Scholar
  9. 9.
    A. Moure, J. Tartaj, C. Moure”. J. Alloys Compd. 509, 7042 (2009)CrossRefGoogle Scholar
  10. 10.
    Y.H. Gu, Y. Wang, F. Chen, H. Lai, W. Chan, W.P. Chen, J. Appl. Phys. 108, 094112 (2010)CrossRefGoogle Scholar
  11. 11.
    Y. Ma, X.M. Chen, Appl. Phys. Lett. 105, 054107 (2009)Google Scholar
  12. 12.
    R.N.P. Choudhary, D.K. Pradhan, C.M. Tirado, G.E. Bonilla, R.S. Katiyar, J. Appl. Phys. 100, 084105 (2006)CrossRefGoogle Scholar
  13. 13.
    L. Luo, L. Zhou, X. Zou, Q. Zheng, D. Lin, J. Mater. Sci. Mater. Electron. 25, 4896–4901 (2014)CrossRefGoogle Scholar
  14. 14.
    A. Kumar, K.L. Yadav, Phys. B Condens. Matter. 406, 1763 (2011)CrossRefGoogle Scholar
  15. 15.
    T.J. Park, G.C. Papaefthymiou, A.J. Viescas, Y. Lee, H. Zhou, S.S. Wong, Phys. Rev. B 82, 024431 (2010)CrossRefGoogle Scholar
  16. 16.
    Y.J. Wu, X.K. Chen, J. Zhang, X.J. Chen, J. Appl. Phys. 111, 053927 (2012)CrossRefGoogle Scholar
  17. 17.
    T. Kawae, Y. Terauchi, H. Tsuda, M. Kumeda, Appl. Phys. Lett. 94, 112904 (2009)CrossRefGoogle Scholar
  18. 18.
    M.S. Wu, Z.B. Huang, C.X. Han, S.L. Yuan, C.L. Lu, S.C. Xia, Solid State Commun. 152, 2142 (2012)CrossRefGoogle Scholar
  19. 19.
    V.R. Palkar, J. John, R. Pinto, Appl. Phys. Lett. 80, 1628 (2002)CrossRefGoogle Scholar
  20. 20.
    R. Castaneda, G.R. George, J. Silva, M.E.F. Montero, J.A.M. Aquino, A.R. Rojas, L. Fuentes, Ceram. Int. 39(7), 8527 (2013)CrossRefGoogle Scholar
  21. 21.
    Y.H. Wang, X. Qi, Proced. Eng. 36, 455 (2012)CrossRefGoogle Scholar
  22. 22.
    A. Kumar, K.L. Yadav, J. Phys. Chem. 72(11), 1189 (2011)Google Scholar
  23. 23.
    Wu E, POWD, An interactive powder diffraction data interpretation and indexing program, ver. 2.1, School of Physical Sciences, Flinders University South Bedford Park, SA 5042 AustraliaGoogle Scholar
  24. 24.
    J. Cheng, S.W. Yu, J. Chen, Z. Meng, L.E. Cross, Appl. Phys. Lett. 89, 122911 (2006)CrossRefGoogle Scholar
  25. 25.
    K.S. Kumar, C. Venkateswar, D. Kannan, B. Tiwari, M.S.R. Rao, J. Phys. D Appl. Phys. 45, 415302 (2012)CrossRefGoogle Scholar
  26. 26.
    R.N.P. Choudhary, D.K. Pradhan, C.M. Tirado, G.E. Bonilla, R.S. Katiyar, J. Mater. Sci. 42, 7423 (2007)CrossRefGoogle Scholar
  27. 27.
    A.K. Jonscher, Nature 267, 673 (1977)CrossRefGoogle Scholar
  28. 28.
    S. Sharma, V. Singh, O. Parkash, R. K. Dwivedi. Appl. Phys. A 112, 975 (2013)CrossRefGoogle Scholar
  29. 29.
    K.K. Mishra, V. Sivasubramanian, R.M. Sarguna, T.R. Ravindran, A.K. Arora, J. Solid State Chem. 184, 2381 (2011)CrossRefGoogle Scholar
  30. 30.
    S. Gupta, S. Bhattacharjee, D. Pandey, V. Bansal, S.K. Bhargava, J.L. Peng, A. Garg, Appl. Phys. A 104, 395 (2011)CrossRefGoogle Scholar
  31. 31.
    D.K. Pradhan, B. Behera, P.R. Das, J. Mater. Sci. Mater. Electron. 23, 779 (2012)CrossRefGoogle Scholar
  32. 32.
    S. Chatterjee, P.K. Mahapatra, R.N.P. Choudhary, A.K. Thakur, Phys. Status Solidi (a) 201, 588 (2004)CrossRefGoogle Scholar
  33. 33.
    C.K. Suman, K. Prasad, R.N.P. Choudhary, J. Mater. Sci. 41, 369 (2006)CrossRefGoogle Scholar
  34. 34.
    V. Provenzano, L.P. Boesch, V. Volterra, C.T. Moynihan, P.B. Macedo, J. Am. Ceram. Soc. 55, 492 (1972)CrossRefGoogle Scholar
  35. 35.
    J. Suchanicz, Mater. Sci. Eng., B 55, 114 (1998)CrossRefGoogle Scholar
  36. 36.
    H. Jain, C.H. Hsieh, J. Non-Cryst. Solids 172, 1408 (1994)CrossRefGoogle Scholar
  37. 37.
    C. Behera, R.N.P. Choudhary, P.R. Das, J. Mater. Sci. Mater. Electron. 25, 2086 (2014)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • S. N. Das
    • 1
  • A. Pattanaik
    • 1
  • S. Kadambini
    • 1
  • S. Pradhan
    • 1
  • S. Bhuyan
    • 1
    Email author
  • R. N. P. Choudhary
    • 2
  1. 1.Department of Electronics and Instrumentation EngineeringSiksha ‘O’ Anusandhan UniversityBhubaneswarIndia
  2. 2.Department of PhysicsSiksha ‘O’ Anusandhan UniversityBhubaneswarIndia

Personalised recommendations