Investigations on high-κ dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies

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Abstract

This paper presents the investigations on high-κ dielectrics for low operating voltage and low leakage zinc oxide thin film transistor (ZnO TFT) using three material selection methodologies namely Ashby, technique for order preference by similarity to ideal solution (TOPSIS) and VlseKriterijumska Optimizacija I Kompromisno Resenjein in Serbian (VIKOR). Various material properties such as dielectric constant, conduction band offset to ZnO, band-gap and temperature coefficient mismatch of high κ to ZnO are investigated to find out the most promising gate dielectric material. The analysis concludes that lanthanum oxide (La2O3) is the most promising gate dielectric material for ZnO TFT transistor. The result shows a good agreement between Ashby’s, TOPSIS and VIKOR approaches.

Keywords

La2O3 HfO2 Ga2O3 Gate Dielectric Material Index 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.

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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  1. 1.Department of Electrical and Electronics EngineeringBirla Institute of Technology and SciencePilaniIndia

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