Investigation of dark current and differential resistance contributing mechanisms in type-II InAs/GaSb superlattice

  • Ruiqin Peng
  • Shujie Jiao
  • Dongwei Jiang
  • Hongtao Li
  • Liancheng Zhao
Article
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Abstract

The zero-bias resistance area (R0A) product is a primary figure-of-merit of infrared detector. The contributions of different dark current to R0A have been analyzed based on a long wavelength infrared type-II InAs/GaSb superlattice p-i-n photodiode. A dark current of 2.052 × 10−4 A cm−2 and a differential resistance-area of 32.314 Ω cm2 at zero bias voltage are achieved with a 100 % cutoff of 12.5 μm at 77 K. The temperature-dependence and bias-dependence of the dark currents are studied experimentally and correlated to the theory. At 77 K, by modeling the different reduced carrier concentration, the dominant mechanism of R0A can be varied from generation-recombination to tunneling.

Keywords

GaSb Dark Current Dark Current Density GaSb Substrate Surface Leakage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgments

This work is supported by National Natural Science Foundation of China (Grant Nos. 61306014 and 61574051).

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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • Ruiqin Peng
    • 1
  • Shujie Jiao
    • 1
  • Dongwei Jiang
    • 1
  • Hongtao Li
    • 1
  • Liancheng Zhao
    • 1
  1. 1.School of Materials Science and EngineeringHarbin Institute of TechnologyHarbinPeople’s Republic of China

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