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Enhancement of the photoluminescence properties of Ba1.98SiO4−δN2/3δ:Eu0.02 phosphors and their application to green LEDs

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Abstract

A green emitting Ba1.98SiO4−δN2/3δ:Eu0.02 phosphor with an appreciable intensity was synthesized using the gas-reduction–nitridation (GRN) method. SEM revealed agglomerated Ba1.98SiO4−δN2/3δ:Eu0.02 particles with irregular morphologies and a primary particle size of 1–2.5 μm. The phosphor showed emission lines of Eu2+ corresponding to the 4f65d1 → 4f7 transition under 370 nm excitation. As the GRN process was conducted to incorporate N3− into the lattice, both the excitation and emission intensity of Ba1.98SiO4−δN2/3δ:Eu0.02 were enhanced greatly compared to Ba1.98SiO4:Eu0.02. The decay time of Ba1.98SiO4−δN2/3δ:Eu0.02 showed that N entered the Ba1.98SiO4:Eu0.02 lattices to replace O to form a NO point defect. The electroluminescence intensity of Ba1.98SiO4−δN2/3δ:Eu0.02 at 503 nm increased with increasing forward bias current. Intense green LEDs were fabricated by coating the synthesized phosphors on the cap of the near-ultraviolet InGaN LEDs (λem = 375 nm). Overall, this phosphor appears to be a promising candidate for solid-state lighting applications.

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Acknowledgments

This work was supported by a 2-Year Research Grant of Pusan National University.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan, 609-735, Republic of Korea

    Shuo Wang, K. N. Hui, X. L. Zhang & Y. R. Cho

  2. Department of Mechanical Convergence Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Republic of Korea

    K. S. Hui

  3. Department of Applied Physics, Adama Science and Technology University, P.O. Box 1888, Adama, Ethiopia

    S. Sambasivam

  4. Department of Physics and Physics Education, RCDAMP, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan, 609-735, Republic of Korea

    In-Hong Kim & Kwangseuk Kyhm

  5. Department of Opto-Mechatronics and Cogno-Mechatronics, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan, 609-735, Republic of Korea

    In-Hong Kim, Woo-Jin Lee & Kwangseuk Kyhm

  6. Department of Engineering in Energy and Applied Chemistry, Silla University, Busan, 617-736, Republic of Korea

    Jung-Chul Park

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  1. Shuo Wang
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  2. K. S. Hui
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Correspondence to K. S. Hui or K. N. Hui.

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Wang, S., Hui, K.S., Hui, K.N. et al. Enhancement of the photoluminescence properties of Ba1.98SiO4−δN2/3δ:Eu0.02 phosphors and their application to green LEDs. J Mater Sci: Mater Electron 27, 2809–2815 (2016). https://doi.org/10.1007/s10854-015-4094-9

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  • DOI: https://doi.org/10.1007/s10854-015-4094-9

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