Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling
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We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mismatch between the film and substrate. The model is verified by Raman scattering experiments with carefully prepared samples. The stresses analyzed from Raman frequency shifts in experiments show excellent agreement with the stresses from finite element modeling simulations. The interaction force mechanisms and the impact factors are compared. The analysis provides an insight in understanding the defect behaviors in film growth. Our model could be useful in the evaluation of the residual stresses and deformations in film growth control, post thermal process in device manufacture, packaging, and reliability estimation.
KeywordsResidual Stress Edge Point Gallium Nitride Thick Substrate High Temperature Part
This work is supported by National Hightech Program (863) with contract number of SS2015AA041802. Prof. Qian Sun is also grateful to the financial support from the National Natural Science Foundation of China (Grant Nos. 61534007, 61404156, and 61522407), the National High Technology Research and Development Program of China (863 Program) (Grant No. 2013AA031901), Suzhou Science and Technology Program (Grant No. ZXG2013042), and the Recruitment Program of Global Experts (1000 Youth Talents Plan). Authors are also grateful to the Analytical and Testing Center, Huazhong University of Science and Technology for technical assistance.
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