Impedance spectroscopy analysis of DH6T:PCBM bulk heterojunction incorporating Gaq3: experiment and model
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Abstract
In this work the impedance spectroscopy of α,ω-dihexyl-sexithiophene: methanofullerene; [6,6]-phenyl C61 butyric acid methyl ester (DH6T:PCBM) bulk heterojunction with and without incorporating tris (8-hydroxyquinolinate) gallium (Gaq3) was investigated in the frequency range from 50 Hz to 1 MHz. An electrical circuit was proposed to model the experimental results and to fit the data. The results showed that incorporation of Gaq3 has led to improve the interfaces between DH6T:Gaq3:PCBM moieties. The relaxation time for the Gaq3 incorporated heterojunction was found to be larger than that of the non-incorporated Gaq3 one, which implied a greater possibility for electrons and holes to transport before they relapse or recombine together. The dielectric loss in the Gaq3 incorporated DH6T:PCBM was found to be smaller than that of the non-incorporated one. This was attributed to the improved pathway for charge carriers to transport upon the addition of Gaq3. A peak in the dielectric loss was noticed for 25 % Gaq3 doped DHT:PCBM at about 106 Hz, suggesting the occurrence of dipolar relaxation. The results were analyzed and discussed based on the experimental and modelling investigations.
Keywords
Dielectric Loss Bulk Heterojunction Charge Carrier Transport High Frequency Peak Impedance Spectroscopy TechniqueNotes
Acknowledgments
The author thanks Dr. Shujahadeen B. Aziz for the EIS measurement. Thanks are due to Department of Physics, Koya University for the administrative support. The author should also like to thank his wife Mrs. Shilan Samin for the Matlab programming and her continuous support.
Compliance with ethical standards
Conflict of interest
The author declares that there is no conflict of interest.
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