Effects of low melting point materials on sinterability and microwave dielectric properties of X2SiO4–CaTiO3 (X = Mg, Zn) for LTCC

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Abstract

The effect of adding different low melting point compounds on the crystalline phases, microstructure and microwave dielectric properties of the X2SiO4–CaTiO3 (X = Mg, Zn) ceramics was compared. The 0.91Mg2SiO4–0.09CaTiO3 samples doped with 15.0–35.0 wt% ZB glass were unsintered at 950 °C for 3 h in air. The grains were denser, as the 0.91Mg2SiO4–0.09CaTiO3 samples were doped with 12.0 wt% BLB and the 0.95Zn2SiO4–0.05CaTiO3 samples were doped with 4.0 wt% LB or 7.0 wt% BLB at 950 °C for 3 h in air. Adding 2.0–6.0 wt% LB to the 0.95Zn2SiO4–0.05CaTiO3 ceramics, the sintering temperature was lowered to 950 °C, the relative density values of the ceramics were more than 90 %, and the Q × f values were more than 18,000 GHz (f = 7.1 GHz). However, the 0.91Mg2SiO4–0.09CaTiO3 ceramics doped with 4.0–8.0 wt% LB were not dense, and the Q × f values were lower than 6500 GHz (f = 7.1 GHz) at 950 °C for 3 h. For the 0.95Zn2SiO4–0.05CaTiO3 ceramics doped with 6.5–8.5 wt% BLB and the 0.91Mg2SiO4–0.09CaTiO3 ceramics doped with 10.0–14.0 wt% BLB, the relative density of the two kinds of the ceramics can reach to 94 %, and the maximum Q × f values of the ceramics were both more than 11,000 GHz (f = 6.1 GHz).

Keywords

Sinter Temperature Microwave Dielectric Property Mg2SiO4 Zn2SiO4 Zinc Borate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgments

This research was supported by Research Fund for the Doctoral Program of Higher Education of China (20133718120009), the Natural Science Foundation of Shandong Provence, China (ZR2013FQ002, ZR2014FQ006), the China Postdoctoral Science Foundation funded project (2014M551935), the Qingdao Postdoctoral Science Foundation funded project, and the Scientific Research Foundation of Shandong University of Science and Technology for Recruited Talents (2013RCJJ042, 2014RCJJ052).

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.College of Electrical Engineering and AutomationShandong University of Science and TechnologyQingdaoPeople’s Republic of China
  2. 2.School of Electronics and Information EngineeringHarbin Institute of TechnologyHarbinPeople’s Republic of China

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