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Influence of temperature on MWCNT bundle, SWCNT bundle and copper interconnects for nanoscaled technology nodes

  • Karmjit SinghEmail author
  • Balwinder Raj
Article

Abstract

This paper presents the comparative analysis of temperature dependent performance of Multi-walled carbon nanotubes (MWCNT), Single-walled carbon nanotube (SWCNT) and copper interconnects for nanoscaled technology nodes. The temperature dependent impedance circuit model is proposed for MWCNT bundle interconnects. The proposed model for MWCNT bundle shows the various electron–phonon scattering mechanisms dependency as a function of temperature. The performance in terms of propagation delay, power dissipation and power delay product for MWCNT bundle interconnects is simulated on the basis of temperature dependent electrical parameters for global interconnects at three different technology nodes viz. 32, 22 and 16 nm for temperature range 200 to 450 K. A similar analysis is performed for SWCNT bundle and copper interconnects and results are compared with the MWCNT bundle interconnects. The comparative results revealed that the performance of MWCNT bundle interconnects is better than the performance of SWCNT bundle and copper interconnects at different temperature ranging from 200 to 450 K for 32, 22 and 16 nm technology nodes at global interconnects.

Keywords

Mean Free Path Technology Node Quantum Capacitance Integrate Circuit Temperature Dependent Impedance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Conflict of interest

The authors declare that they have no conflict of interest.

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineeringThapar UniversityPatialaIndia
  2. 2.Department of Electronics and Communication EngineeringNational Institute of TechnologyJallandharIndia

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