Low current consuming thermally stable sulphide phase change memory
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We show that phase change media based on the gallium and lanthanum chalcogenides can outperform the well know benchmark performance of germanium antimony telluride devices in two key specifications thermal stability and power consumption. Through the fabrication and characterisation of identical nanoscale gallium lanthanum sulphide and germanium antimony telluride based devices, we show that the former compounds offer lower current consumption, while still exhibiting a relatively high resistance in both phases and high resistance contrast between phases, comparable to an equivalent germanium antimony telluride device. We also demonstrate that these sulphide-based devices continue to display a measurable threshold and retain information at temperatures above 500 °C, considerably outperforming conventional telluride based devices.
KeywordsPhase Change Material Current Consumption Deposition Power Phase Change Memory Threshold Switching
This work was funded through the Engineering and Physical Science Research Council under Grant reference EP/H02607X/1-EPSRC Centre for Innovative Manufacturing in Photonics.
Conflict of interest
The authors declare that they have no conflict of interest.
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