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Effect of buffer layer on growth and properties of ZnO nanorod arrays

  • Zhixiang Ye
  • Xiaohong JiEmail author
  • Qinyuan Zhang
Article

Abstract

ZnO nanorods arrays on ZnO buffered Si substrates have been obtained by conventional chemical vapor deposition. The influence of ZnO buffer layer on the growth and properties of the ZnO nanorods have been studied. The morphology and the alignment ordering of ZnO nanorods arrays were greatly affected by the thickness of ZnO buffers. Photoluminescence and field emission properties can be enhanced by modulating the thicknesses of the ZnO buffer layers. ZnO nanorods with the best crystallinity and the highest ordering were obtained with 50-nm-thick ZnO buffer layer, which exhibits the strongest UV emission.

Keywords

Buffer Layer Field Emission Property Buffer Layer Thickness Field Emission Current Density Electron Field Emission Property 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

This work is supported by National Natural Science Foundation of China (No. 51102098).

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.School of Materials Science and EngineeringSouth China University of TechnologyGuangzhouChina
  2. 2.State Key Laboratory of Luminescent Materials and Devices, and Institute of Optical Communication MaterialsSouth China University of TechnologyGuangzhouChina

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