Improved electrical and ferroelectric properties of multiferroic Na0.5Bi0.5TiO3/Bi1.07Nd0.03FeO3/Na0.5Bi0.5TiO3 sandwiched structure by a sol–gel process

  • F. Shao
  • J. MiaoEmail author
  • S. Z. Wu
  • Z. H. Li
  • X. G. Xu
  • P. Feng
  • Y. Jiang


A ferroelectric/multiferroic/ferroelectric sandwiched structure composed by Na0.5Bi0.5TiO3 (NBT) and Bi1.07Nd0.03FeO3 (BNF) with a LaNiO3 buffer layer were prepared by a sol–gel method. X-ray diffraction indicated the NBT/BNF/NBT films exhibited a pure perovskite structure. The average grain size of BNF and NBT/BNF/NBT were found to be 40 and 80 nm, respectively. Interestingly, the electrical and ferroelectric properties such as leakage current, dielectric constant, and remnant polarization of NBT/BNF/NBT sandwiched layer, were superior to those of BNF single film. However, the saturation magnetization of NBT/BNF/NBT sandwiched layer was reduced. Our work suggested the NBT/BNF/NBT sandwiched layer with improved multiferroic characteristics have a promising application for future information storage devices.


Bi2O3 BiFeO3 Sandwich Structure Ferroelectric Property Remnant Polarization 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was supported by National Basic Research Program of China (No. 2012CB932702), Beijing Municipal Natural Science Foundation (No. 2122037), NCET, the NSFC (Nos. 11174031, 51371024, 51325101), PCSIRT, and Fundamental Research Funds for the Central Universities.


  1. 1.
    J.Z. Huang, Y. Wang, Y.H. Lin, M. Li, C.W. Nan, J. Appl. Phys. 106, 063911 (2009)CrossRefGoogle Scholar
  2. 2.
    J. Wang, J.B. Neaton, H. Zheng, K.M. Rabe, M. Wuttig, R. Ramesh, Science 299, 1719 (2003)CrossRefGoogle Scholar
  3. 3.
    T. Zhao, A. Scholl, F. Zavaliche, K. Lee, M. Barry, A. Doran, M.P. Cruz, Y.H. Chu, C. Ederer, N.A. Spaldin, R.R. Das, D.M. Kim, S.H. Baek, C.B. Eom, R. Ramesh, Nat. Mater. 5, 823 (2006)CrossRefGoogle Scholar
  4. 4.
    S. Lee, W. Ratcliff, S.W. Cheong, V. Kiryukhin, Appl. Phys. Lett. 92, 192906 (2008)CrossRefGoogle Scholar
  5. 5.
    C. Ederer, N.A. Spaldin, Phys. Rev. B 71, 060401 (2005)CrossRefGoogle Scholar
  6. 6.
    L.J. Li, J.Y. Li, Y.C. Shu, J.H. Yen, Appl. Phys. Lett. 93, 192506 (2008)CrossRefGoogle Scholar
  7. 7.
    C.-U. Pinnow, T. Mikojajick, J. Electrochem. Soc. 151, K13 (2004)CrossRefGoogle Scholar
  8. 8.
    Y.P. Wang, L. Zhou, M.F. Zhang, X.Y. Chen, J.M. Liu, Z.G. Liu, Appl. Phys. Lett. 84, 1731 (2004)CrossRefGoogle Scholar
  9. 9.
    H.W. Jang, S.H. Baek, D. Ortiz, C.M. Folkman, C.B. Eom, Y.H. Chu, P. Shafer, R. Ramesh, V. Vaithyanathan, D.G. Schlom, Appl. Phys. Lett. 92, 062910 (2008)CrossRefGoogle Scholar
  10. 10.
    D. Varshney, A. Kumar, J. Mol. Struct. 1038, 242–249 (2013)CrossRefGoogle Scholar
  11. 11.
    B.C. Luo, C.L. Chen, K.X. Jin, Solid State Commun. 151, 712–715 (2011)CrossRefGoogle Scholar
  12. 12.
    W.W. Mao, X. Li, Y.T. Li, X.W. Wang, Y.F. Wang, Mater. Lett. 97, 56–58 (2013)CrossRefGoogle Scholar
  13. 13.
    Y. Wang, Y.H. Lin, C.W. Nan, J. Appl. Phys. 104, 123912 (2008)CrossRefGoogle Scholar
  14. 14.
    S.H. Joa, S.G. Leea, S.H. Leeb, Mater. Res. Bull. 47, 409–412 (2012)CrossRefGoogle Scholar
  15. 15.
    D.H. Li, X.Q. Sun, X.H. Chuai, Z.F. Wu, Z.J. Cao, Y.F. Yan, D.M. Zhang, J. Cryst. Growth 338, 85–90 (2012)CrossRefGoogle Scholar
  16. 16.
    K.Y. Yun, M. Noda, M. Okuyama, H. Saeki, H. Tabata, J. Appl. Phys. 96, 3399 (2004)CrossRefGoogle Scholar
  17. 17.
    X.J. Xing, Y.P. Yu, L.M. Xu, Y.L. Zhang, S.W. Li, Mater. Sci. Eng. B 147, 95–99 (2008)CrossRefGoogle Scholar
  18. 18.
    H.R. Liu, X.Z. Wang, Solid State Commun. 147, 433–435 (2008)CrossRefGoogle Scholar
  19. 19.
    M. Dawber, K.M. Rabe, J.F. Scott, Rev. Mod. Phys. 77, 1083 (2005)CrossRefGoogle Scholar
  20. 20.
    L. Pintilie, M. Alexe, J. Appl. Phys. 98, 123103 (2005)CrossRefGoogle Scholar
  21. 21.
    V.V. Lazenka, A.F. Ravinski, I.I. Makoed, J. Vanacken, G. Zhang, V.V. Moshchalkov, J. Appl. Phys. 111, 123916 (2012)CrossRefGoogle Scholar
  22. 22.
    Z.B. Lin, W. Cai, W.H. Jiang, Y.X. Song, Ceram. Int. 39, 8 (2013)Google Scholar
  23. 23.
    Z.Y. Zhong, H. Ishiwara, Appl. Phys. Lett. 95, 112902 (2009)CrossRefGoogle Scholar
  24. 24.
    B. Nagaraj, S. Aggarwal, T.K. Song, T. Sawhney, R. Ramesh, Phys. Rev. B. 59, 24 (1999)CrossRefGoogle Scholar
  25. 25.
    Venkata M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, H. Schmidt, N. Ianno, M. Schubert, Phys. Rev. B. 81, 195307 (2010)CrossRefGoogle Scholar
  26. 26.
    J.G. Simmons, Phys. Rev. Lett. 15, 967 (1965)CrossRefGoogle Scholar
  27. 27.
    J.F. Scott, J. Phys. Condens. Matter 18, R361 (2006)CrossRefGoogle Scholar
  28. 28.
    J.G. Wu, J. Wang, J. Appl. Phys. 108, 094107 (2010)CrossRefGoogle Scholar
  29. 29.
    M.A. Lampert, Phys. Rev. 103, 6 (1956)CrossRefGoogle Scholar
  30. 30.
    J.G. Wu, D.Q. Xiao, J.G. Zhu, J.L. Zhu, J.Z. Tan, Q.L. Zhang, Appl. Phys. Lett. 90, 082902 (2007)CrossRefGoogle Scholar
  31. 31.
    S.H. Jo, S.G. Lee, Y.H. Lee, Nanoscale Res. Lett. 7, 54 (2012)CrossRefGoogle Scholar
  32. 32.
    L. Pintilie, C. Dragoi, V. Stancu, I. Pintilie, Ferroelectrics 391, 58–66 (2009)CrossRefGoogle Scholar
  33. 33.
    C.H. Yang, G.D. Hu, W.B. Wu, H.T. Wu, F. Yang, Z.Y. Lu, L. Wang, Appl. Phys. Lett. 100, 022909 (2012)CrossRefGoogle Scholar
  34. 34.
    J.X. Zhang, Q. He, M. Trassin, W. Luo, D. Yi, M.D. Rossell, P. Yu, L. You, C.H. Wang, C.Y. Kuo, J.T. Heron, Z. Hu, R.J. Zeches, H.J. Lin, A. Tanaka, C.T. Chen, L.H. Tjeng, Y.-H. Chu, R. Ramesh, Phys. Rev. Lett. 107, 147602 (2011)CrossRefGoogle Scholar
  35. 35.
    J.G. Wu, J. Wang, Electrochem. Solid State Lett. 12, G61–G64 (2009)CrossRefGoogle Scholar
  36. 36.
    M. Jain, B.S. Kang, Q.X. Jia, Appl. Phys. Lett. 89, 242903 (2006)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • F. Shao
    • 1
    • 2
  • J. Miao
    • 1
    Email author
  • S. Z. Wu
    • 1
  • Z. H. Li
    • 1
  • X. G. Xu
    • 1
  • P. Feng
    • 2
  • Y. Jiang
    • 1
  1. 1.School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijingChina
  2. 2.Department of PhysicsUniversity of Science and Technology BeijingBeijingChina

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