Brush plated copper indium sulphide films and their properties

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Abstract

Copper indium sulphide films were deposited for the first time by the brush plating technique at different electrolyte temperatures in the range of 30–80 °C and at a constant deposition current density of 5.0 mA cm−2. The Films exhibited single phase copper indium sulphide. The grain size increased with increase of electrolyte temperature. Optical band gap of the films varied in the range of 1.30–1.42 eV. Atomic force microscopy studies indicated that the grain size vary from 600 to 1,000 nm, with increase of substrate temperature. Solar cells fabricated with the films exhibited Voc of 650 mV, Jsc of 19.5 mA cm−2, ff of 0.73 and efficiency of 9.50 %.

Keywords

Solar Cell Electrolyte Temperature Flat Band Potential Selective Plating Binding Energy Peak 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • B. Kajamaideen
    • 1
  • A. Panneerselvam
    • 2
  • K. R. Murali
    • 3
  1. 1.Department of Basic SciencesSree Narayana Guru Polytechnic CollegeCoimbatoreIndia
  2. 2.Department of PhysicsPavai College of TechnologyNamakkalIndia
  3. 3.ECMS DivisionCSIR-CECRIKaraikudiIndia

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