Journal of Materials Science: Materials in Electronics

, Volume 24, Issue 12, pp 4919–4924

Investigation of dual ion beam sputtered transparent conductive Ga-doped ZnO films

  • Saurabh Kumar Pandey
  • Sushil Kumar Pandey
  • Shruti Verma
  • M. Gupta
  • V. Sathe
  • Shaibal Mukherjee


Ga-doped ZnO (GZO) transparent conducting films were deposited on sapphire (0001) substrates using dual ion beam sputtering deposition system. The impact of growth temperature on the structural, morphological, elemental, optical, and electrical properties was thoroughly investigated and reported. X-ray diffraction measurements explicitly confirmed that all GZO films had (002) preferred crystal orientation. The film deposited at 400 °C exhibited the narrowest full-width at half-maximum value of 0.24° for (002) crystalline plane and the lowest room temperature electrical resistivity of 4.11 × 10−3 Ω cm. The Raman spectra demonstrated the vibrational modes at 576 and 650–670 cm−1, associated with native oxygen vacancies and elemental Ga doping in ZnO lattice, respectively. All doped films showed an overall transmittance of above 95 % in the visible spectra. A correlation between structural, optical, elemental, and electrical properties with GZO growth temperature was established.


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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Saurabh Kumar Pandey
    • 1
  • Sushil Kumar Pandey
    • 1
  • Shruti Verma
    • 1
  • M. Gupta
    • 2
  • V. Sathe
    • 2
  • Shaibal Mukherjee
    • 1
  1. 1.Hybrid Nanodevice Research Group (HNRG), Discipline of Electrical EngineeringIndian Institute of TechnologyIndoreIndia
  2. 2.University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific ResearchIndoreIndia

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