Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate

  • Engin Arslan
  • Mustafa K. Ozturk
  • Huseyin Çakmak
  • Pakize Demirel
  • Süleyman Özçelik
  • Ekmel Ozbay
Article
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Abstract

The InxGa1−xN epitaxial layers, with indium (x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) Al2O3 substrate by metal organic chemical vapour deposition. The indium content (x), lattice parameters and strain values in the InGaN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10–15) reflection of the GaN and InGaN layers. The characteristics of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements. With a combination of Williamson–Hall (W-H) measurements and the fitting of twist angles, it was found that the indium content in the InGaN epilayers did not strongly effect the mosaic structures’ parameters, lateral and vertical coherence lengths, tilt and twist angle, or heterogeneous strain of the InGaN epilayers.

Keywords

Tilt Angle Screw Dislocation Twist Angle InGaN Layer Indium Content 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgments

This work is supported by the European Union under the projects EU-METAMORPHOSE, EU-PHOREMOST, EU-PHOME, and EU-ECONAM, and TUBITAK under Project Numbers 105E066, 105A005, 106E198, and 106A017. One of the authors (E. O.) also acknowledges partial support from the Turkish Academy of Sciences.

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Engin Arslan
    • 1
    • 2
  • Mustafa K. Ozturk
    • 3
  • Huseyin Çakmak
    • 1
    • 2
  • Pakize Demirel
    • 1
    • 2
  • Süleyman Özçelik
    • 3
  • Ekmel Ozbay
    • 1
    • 2
  1. 1.Department of Physics, Nanotechnology Research Center-NANOTAMBilkent UniversityAnkaraTurkey
  2. 2.Department of Electrical and Electronics Engineering, Nanotechnology Research Center-NANOTAMBilkent UniversityAnkaraTurkey
  3. 3.Department of Physics, Faculty of Science and ArtsGazi UniversityAnkaraTurkey

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