Modifications induced by silicon and nickel ion beams in the electrical conductivity of zinc nanowires

Article
First Online:
Received:
Accepted:

Abstract

This paper presents the modification in electrical conductivity of Zn nanowires under swift heavy ions irradiation at different fluences. The polycrystalline Zn nanowires were synthesized within polymeric templates, using electrochemical deposition technique and were irradiated with 80 MeV Si7+ and 110 MeV Ni8+ ion beams with fluence varying from 1 × 1012 to 3 × 1013 ions/cm2. I–V characteristics of exposed nanowires revealed a decrease in electrical conductivity with increase in ion fluence which was found to be independent of applied potential difference. But in the case of high fluence of Ni ion beam (3 × 1013 ions/cm2), electrical conductivity was found to increase with potential difference. The analysis found a significant contribution from grain boundaries scattering of conduction electrons and defects produced by ion beam during irradiation on flow of charge carriers in nanowires.

Keywords

Diffusive Scattering Order Polynomial Equation Nuclear Energy Loss Zinc Nanowires Localization Electron Phonon Interaction 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Notes

Acknowledgments

The authors wish to acknowledge the help provided by the Director and technical staff of pelletron group during the irradiation experiment at Inter University Accelerator Centre (IUAC), New Delhi, India.

References

  1. 1.
    T.A. Ha, V.M. Tran, M.L.P. Le, Adv. Nat. Sci. Nanosci. Nanotechnol 4, 035004 (2013)CrossRefGoogle Scholar
  2. 2.
    J.C. Colmenares, R. Luque, J.M. Campelo, F. Colmenares, Z. Karpiński, A.A. Romero, Materials 2, 2228 (2009)CrossRefGoogle Scholar
  3. 3.
    K. Krishnamoorthy, R. Mohan, S.J. Kim, Appl. Phys. Lett. 98, 244101 (2011)CrossRefGoogle Scholar
  4. 4.
    Q. Xiang, J. Yu, M. Jaroniec, Chem. Soc. Rev. 41, 782 (2012)CrossRefGoogle Scholar
  5. 5.
    G. Wang, L. Zhang, J. Zhang, Chem. Soc. Rev. 41, 797 (2012)CrossRefGoogle Scholar
  6. 6.
    V. Gupta, N. Miura, Mat. Lett. 60, 1466 (2006)CrossRefGoogle Scholar
  7. 7.
    S.Y. Li, P. Lin, C.Y. Lee, T.Y. Tseng, J. Mater. Sci.: Mater. Electron. 15, 505 (2004)CrossRefGoogle Scholar
  8. 8.
    V. Kumar, S. Kumar, S.K. Chakarvarti, J. Mater. Sci.: Mater. Electron. 21, 1277 (2010)CrossRefGoogle Scholar
  9. 9.
    C. Durkan, M.E. Welland, Phys. Rev. B 61, 14215 (2000)CrossRefGoogle Scholar
  10. 10.
    A. Bid, A. Bora, A.K. Raychaudhuri, Phys. Rev. B. 74, 035426 (2006)CrossRefGoogle Scholar
  11. 11.
    W.S. Khan, C. Cao, J. Zhong, Y. Liu, M.A. Iqbal, Mater. Lett. 64, 2273 (2010)CrossRefGoogle Scholar
  12. 12.
    E. Deiss, F. Holzer, O. Hass, Electrochim. Acta 47, 3995 (2002)CrossRefGoogle Scholar
  13. 13.
    J.P. Heremans, C.M. Thrush, D.T. Morell, M.C. Wu, Phys. Rev. Lett. 91, 076804 (2003)CrossRefGoogle Scholar
  14. 14.
    Q. Li, C. Wang, Chem. Phys. Lett. 375, 525 (2003)CrossRefGoogle Scholar
  15. 15.
    Q. Li, K.W. Kwong, Phys. Rev. Lett. 92, 186102 (2004)CrossRefGoogle Scholar
  16. 16.
    Y.J. Chen, B. Chi, H.Z. Zhang, H. Chen, Y. Chen, Mater. Lett. 61, 144 (2007)CrossRefGoogle Scholar
  17. 17.
    J. Jun, S. Park, J. Lee, C. Lee, J. Mater. Sci.: Mater. Electron. 20, 1150 (2009)CrossRefGoogle Scholar
  18. 18.
    S.S. Chang, S.O. Yoon, H.J. Park, A. Saka, Mater. Lett. 53, 432 (2002)CrossRefGoogle Scholar
  19. 19.
    Y. Yan, P. Liu, M.J. Romero, M.M. Al-Jassim, J. Appl. Phys. 93, 4807 (2003)CrossRefGoogle Scholar
  20. 20.
    M. Thambidurai, N. Muthukumarasamy, D. Velauthapillai, C. Le, J. Mater. Sci.: Mater. Electron. 24, 1921 (2013)CrossRefGoogle Scholar
  21. 21.
    R.P. Chauhan, D. Gehlawat, A. Kaur, J. Exp. Nanosci. (2012) doi: 10.1080/17458080.2012.736639
  22. 22.
    R. Sathyamoorthy, S. Chandramohan, P. Sudhagar, D. Kanjilal, D. Kabiraj, K. Asokan, K.P. Vijayakumar, J. Mater. Sci. 42, 6982 (2007)CrossRefGoogle Scholar
  23. 23.
    R.S. Madatov, A.I. Najafov, T.B. Tagiev, A.R. Mobili, Inorg. Mat. 44, 100 (2008)CrossRefGoogle Scholar
  24. 24.
    S.L. Sharma, T.K. Maity, Bull. Mater. Sci. 34, 61 (2011)CrossRefGoogle Scholar
  25. 25.
    R.D. Schrimpf, D.M. Fleetwood, M.L. Alles, R.A. Reed, G. Lucovsky, S.T. Pantelides, Microelectron. Eng. 88, 1259 (2011)CrossRefGoogle Scholar
  26. 26.
    A.V. Krasheninnikov, K. Nordlund, J. Appl. Phys. 107, 071301 (2010)CrossRefGoogle Scholar
  27. 27.
    G. Cao, D. Liu, Adv. Colloid Interf. Sci. 136, 45 (2008)CrossRefGoogle Scholar
  28. 28.
    K. Ariga, A. Vinu, Y. Yamauchi, Q. Ji, J.P. Hill, Bull. Chem. Soc. Jpn. 85, 1 (2012)CrossRefGoogle Scholar
  29. 29.
    S. Kumar, A. Vohra, S.K. Chakarvarti, J. Mater. Sci.: Mater. Electron. 24, 711 (2013)CrossRefGoogle Scholar
  30. 30.
    D. Gehlawat, R.P. Chauhan, R.G. Sonkawade, S.K. Chakarvarti, Appl. Phys. A 106, 157 (2012)CrossRefGoogle Scholar
  31. 31.
    D. Gehlawat, R.P. Chauhan, R.G. Sonkawade, Sci. Adv. Mater. 4, 1 (2012)CrossRefGoogle Scholar
  32. 32.
    M.S. Dresselhaus, Y.M. Lin, O. Rabin, M.R. Black, G. Dresselhaus, in Springer Handbook of Nanotechnology, ed. by B. Bhushan (Springer, New York, 2004), p. 99CrossRefGoogle Scholar
  33. 33.
    K.K. Choudhary, J. Phys. Chem. Solids 73, 460 (2012)CrossRefGoogle Scholar
  34. 34.
    R. Nagar, B.R. Mehta, J.P. Singh, D. Jain, V. Ganesan, S.V. Kesapragada, D. Gall, J. Vac. Sci. Technol., A 26, 887 (2008)CrossRefGoogle Scholar
  35. 35.
    S.K. Neogi, S. Chattopadhyay, A. Banerjee, S. Bandyopadhyay, A. Sarkar, R. Kumar, J. Phys.: Condens. Matter 23, 205801 (2011)CrossRefGoogle Scholar
  36. 36.
    K. Fuchs, Proc. Camb. Philos. Soc. 34, 100 (1938)CrossRefGoogle Scholar
  37. 37.
    R.B. Dingle, Proc. R. Soc. A 201, 545 (1950)CrossRefGoogle Scholar
  38. 38.
    F. Mayadas, M. Shatzkes, Phys. Rev. B 1, 1382 (1970)CrossRefGoogle Scholar
  39. 39.
    R.L. Graham, G.B. Alers, T. Mountsier, N. Shamma, S. Dhuey, S. Cabrini, R.H. Geiss, D.T. Read, S. Peddeti, Appl. Phys. Lett. 96, 042116 (2010)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Department of PhysicsNational Institute of TechnologyKurukshetraIndia

Personalised recommendations