High dielectric permittivity and low loss of SrBi4Ti4O15 with PbO and V2O5 additions for RF and microwave applications
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In this paper SrBi4Ti4O15 (SBTi), a perovskite-type ceramic, with cation deficit A5B4O15, was prepared by solid-state reaction method and PbO and V2O5 were added into SBTi (2, 5, 10 and 15 wt%). Samples were characterized through X-Ray Diffraction (XRD), Raman Spectroscopy and Scanning Electron Microscopy (SEM). Impedance Spectroscopy was carried out at room temperature. The analysis by XRD using the Rietveld refinement has confirmed the formation of single-phase compound with a crystalline tetragonal system (a = 3.8408 Å, b = 3.8408 Å and c = 41.0959 Å). A SEM shows globular grains (with addition of PbO) and crystal-shape ones (with additions of V2O5), from about 1 to 2 μm. The dielectric properties: dielectric permittivity (K′) and dielectric loss (tan δ) were measured at room temperature over a range of 100 Hz–40 MHz by complex impedance spectroscopy and in the microwave (MW) frequency region were studied. The study showed that these properties are strongly dependent on frequency and on the added level of the impurity. All the samples were analyzed taking into account to possible applications in radio frequency (RF) and MW devices.
KeywordsDielectric Loss V2O5 Dielectric Permittivity Sintered Pellet Relative Dielectric Permittivity
This work was partly sponsored by CNPq and CAPES (Brazilian agencies) and the US Air Force Office of Scientific Research (AFOSR) (FA9550-11-1-0095).
- 4.M. Hirose, T. Suzuki, H. Oka, K. Itakura, Y. Miyauchi, T. Tsukada, Jpn. J. Appl. Phys. 38 (1999) doi: 10.1143/JJAP.38.5561
- 5.N.A.A. Manafe, M.M. Sallehl, M. Yahaya, Semicond. Electron. (2006) doi: 10.1109/SMELEC.2006.381011
- 7.A.J. Moulson, J.M. Herbert (eds) Electroceramics: materials, properties, applications 2nd Edn Wiley (2003)Google Scholar
- 9.R. A. Young, A. Sakthivel, T. S. Moss, C. O. Paiva-Santos DBWS-9411–an upgrade of the DBW* programs for Rietveld refinement with PC and mainframe computers. J. Appl. Cryst. 28, 366–367 (1995)Google Scholar
- 10.F.M.M. Pereira, C.A.R. Junior, M.R.P. Santos, R.S.T.M. Sohn, F.N.A. Freire, J.M. Sasaki, J.A.C. de Paiva, A.S.B. Sombra, J. Mater. Sci.: Mater. Electron. 19, 627–638 (2008)Google Scholar
- 11.B. W. Hakki P. D. Coleman, IRE. Trans. Microw. Theory Tech. MTD-8 (1960), 402–410Google Scholar
- 12.P.B.A. Fechine, H.H.B. Rocha, R.S.T. Moretzsohn, J.C. Denardin, R. Lavin, A.S.B. Sombra, Microw. Antennas Propag. IET. 3.8, 1191–1198 (2009) doi: 10.1049/iet-map.2008.0301
- 14.W. Schmidt, Materiais Elétricos—Vol 1, (Ed. Edgard Blucher, Paulo, 1979), pp 77–96Google Scholar
- 15.M.J.S. Rocha, P.M.O. Silva, K.R.B. Theophilo, E.O. Sancho, P.V.L Paula, M.A.S. Silva, S.B. Honorato, A.S.B. Sombra, Phys. Scr. 86 (2012) 025701 (9 pp) doi: 10.1088/0031-8949/86/02/025701