Journal of Materials Science: Materials in Electronics

, Volume 24, Issue 9, pp 3467–3473 | Cite as

High dielectric permittivity and low loss of SrBi4Ti4O15 with PbO and V2O5 additions for RF and microwave applications

  • C. A. RodriguesJr.Email author
  • J. M. S. Filho
  • P. M. O. Silva
  • M. A. S. Silva
  • C. C. M. Junqueira
  • A. S. B. Sombra


In this paper SrBi4Ti4O15 (SBTi), a perovskite-type ceramic, with cation deficit A5B4O15, was prepared by solid-state reaction method and PbO and V2O5 were added into SBTi (2, 5, 10 and 15 wt%). Samples were characterized through X-Ray Diffraction (XRD), Raman Spectroscopy and Scanning Electron Microscopy (SEM). Impedance Spectroscopy was carried out at room temperature. The analysis by XRD using the Rietveld refinement has confirmed the formation of single-phase compound with a crystalline tetragonal system (a = 3.8408 Å, b = 3.8408 Å and c = 41.0959 Å). A SEM shows globular grains (with addition of PbO) and crystal-shape ones (with additions of V2O5), from about 1 to 2 μm. The dielectric properties: dielectric permittivity (K′) and dielectric loss (tan δ) were measured at room temperature over a range of 100 Hz–40 MHz by complex impedance spectroscopy and in the microwave (MW) frequency region were studied. The study showed that these properties are strongly dependent on frequency and on the added level of the impurity. All the samples were analyzed taking into account to possible applications in radio frequency (RF) and MW devices.


Dielectric Loss V2O5 Dielectric Permittivity Sintered Pellet Relative Dielectric Permittivity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was partly sponsored by CNPq and CAPES (Brazilian agencies) and the US Air Force Office of Scientific Research (AFOSR) (FA9550-11-1-0095).


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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • C. A. RodriguesJr.
    • 1
    • 2
    Email author
  • J. M. S. Filho
    • 1
    • 2
  • P. M. O. Silva
    • 1
    • 2
  • M. A. S. Silva
    • 2
  • C. C. M. Junqueira
    • 3
  • A. S. B. Sombra
    • 2
  1. 1.Departamento de Engenharia de Teleinformática, Centro de TecnologiaUniversidade Federal do CearáFortalezaBrazil
  2. 2.Laboratório de Telecomunicações e Ciência e Engenharia de Materiais (LOCEM)Universidade Federal do CearáFortalezaBrazil
  3. 3.Instituto de Aeronáutica e Espaço IAEPraça Marechal Eduardo GomesSão PauloBrazil

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