Orientation control of a seeding layer and its effect on structure, ferro- and piezoelectric properties of sol–gel derived Bi3.15Nd0.85Ti3O12 thin films

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Abstract

We report on the orientation control of a seeding layer for sol–gel derived Bi3.15Nd0.85Ti3O12 thin films by optimizing the layer thickness and processing parameters including annealing temperature and time. A 75-nm-thick seeding layer with (100) preferential orientation can be obtained on SiO2/Si substrate by annealing at 560 °C for 3 min. The Bi3.15Nd0.85Ti3O12 thin film grown on this optimized seeding layer exhibits a much higher relative intensity of (200) X-ray diffraction peak, which in turn results in more squared P–E hysteresis loops, larger remanent polarization (2P r ~ 62 μC/cm2) and piezoelectric coefficient (d 33 ~ 74 pm/V) compared to the film without the optimized first layer prepared using the conventional sequential layer annealing method.

Keywords

Piezoelectric Property Seeding Layer Piezoelectric Coefficient Orientation Control Piezoelectric Response 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgments

This work is supported by funding from the National Natural Science Foundation of China (No. 50972049 and 51172094) and Natural Science Foundation of Shandong Province, China (No. ZR2009FZ008).

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.School of Materials Science and EngineeringUniversity of JinanJinanChina
  2. 2.Department of PhysicsQilu Normal UniversityJinanChina

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