Effect of Mg content on structure and properties of Mg x Zn1−x O:Al UV transparent conducting films

  • Hua Wang
  • Zhu Huang
  • Ji-wen Xu
  • Ling Yang
  • Ming-fang Ren
Article
First Online:
Received:
Accepted:

Abstract

Mg x Zn1−x O:Al (0 ≤ x ≤ 0.6) UV transparent conducting films were deposited on quartz glass by radio frequency magnetron sputtering. Effect of Mg content on structure, optical and electrical properties of Mg x Zn1−x O:Al films was investigated. There is a single phase of basic wurtzite structure of ZnO in Mg x Zn1−x O:Al films at x ≤ 0.4, and of a basic structure of cubic structure of MgO at x ≥ 0.6. The band gap can be varied from 3.27 to 5.90 eV by controlling Mg contents. The resistivity of Mg x Zn1−x O:Al films increase with increasing Mg content x due to the decrease of Al-doping efficiency. The electrical conduction of Mg x Zn1−x O:Al films can be markedly improved by increasing the Al-doping level appropriately and annealing in argon atmosphere at over 500 °C. The maximum band gap of Mg x Zn1−x O:Al films with wurtzite structure was found to be 5.35 eV when Mg content x is 0.4, and the minimum resistivity of 5.4 × 10−4 Ω cm was obtained when the Al/(Zn + Mg + Al) is 0.03 and the annealing temperature is over 500 °C. The average transmittance of Mg x Zn1−x O:Al films was higher than 86% in the wavelength region from 300 (x ≥ 0.4) to 800 nm.

Keywords

Quartz Glass Hexagonal Wurtzite Structure Radio Frequency Magnetron Radio Frequency Magnetron Sputtering Phase Hexagonal Wurtzite 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Notes

Acknowledgments

This work was supported by Foundation of Guangxi Educational Committee Scientific Research (No. 200734).

References

  1. 1.
    Y.F. Chen, D.M. Bagnall, H.J. Koh, K.T. Park, K. Hiraga, Z.Q. Zhu, T. Yao, J. Appl. Phys. 84, 7–3912 (1998)Google Scholar
  2. 2.
    W. Yang, R.D. Vispute, S. Choopun, R.P. Sharma, T. Venkatesan, Appl. Phys. Lett. 78, 2787 (2001)CrossRefADSGoogle Scholar
  3. 3.
    H. Ohta, K. Nomura, H. Hiramatsu, Solid-state Electron. 47, 2261 (2003)CrossRefADSGoogle Scholar
  4. 4.
    V. Ratnakar, V. Thirumalai, Y. Wei, C. Supab. US Patent: US 2006 7132668Google Scholar
  5. 5.
    K. Koike, K. Hama, I. Nakashima, G.Y. Takada, K.I. Ogata, S. Sasa, M. Inoue, M. Yano, J. Cryst. Growth 278, 288 (2005)CrossRefADSGoogle Scholar
  6. 6.
    R. Thangavel, M. Rajagopalan, J. Kumar, Solid State Commun. 137(9), 507 (2006)CrossRefADSGoogle Scholar
  7. 7.
    S. Choopun, R.D. Vispute, W. Yang, R.P. Sharma, T. Venkatesan, Appl. Phys. Lett. 80(9), 1529 (2002)CrossRefADSGoogle Scholar
  8. 8.
    K. Matsubara, H. Tampo, H. Shibata, Appl. Phys. Lett. 85, 1374 (2004)CrossRefADSGoogle Scholar
  9. 9.
    D.J. Cohen, K.C. Ruthe, S.A. Barnett, J. Appl. Phys. 96, 1–459 (2004)CrossRefGoogle Scholar
  10. 10.
    Z. Vashaei, T. Minegishi, H. Suzuki, T. Hanada, M.W. Cho, T. Yao, A. Setiawan, J. Appl. Phys. 98, 54911 (2005)CrossRefADSGoogle Scholar
  11. 11.
    A. Nakamura, K. Yamamoto, J. Ishihara, T. Aoki, J. Temmyo, Jpn. J. Appl. Phys. 44, 7267 (2005)CrossRefADSGoogle Scholar
  12. 12.
    S. Choopun, R.D. Vispute, W. Yang, R.P. Sharma, T. Venkatesan, H. Shen, Appl. Phys. Lett. 80, 1529 (2002)CrossRefADSGoogle Scholar
  13. 13.
    X. Zhang, H. Ma, Q. Qang, J. Ma, F. Zong, H. Xiao, F. Ji, S. Hou, Physica B 364, 157 (2005)CrossRefADSGoogle Scholar
  14. 14.
    Z. Ji, Y. Song, Y. Xiang, K. Liu, C. Wang, Z. Ye, J. Cryst. Growth 265, 537 (2004)CrossRefADSGoogle Scholar
  15. 15.
    H. Wang, J.W. Xu, M.F. Ren, L. Yang, J. Mater Sci.: Mater Electron. 19, 1135 (2008)CrossRefGoogle Scholar
  16. 16.
    Y.J. Li, Y.W. Heo, Y. Kwon, K. Ip, S.J. Pearton, D.P. Norton, Appl. Phys. Lett. 87, 072101 (2005)CrossRefADSGoogle Scholar
  17. 17.
    D.J. Cohen, K.C. Ruthe, S.A. Barnett, J. Appl. Phys. 96, 459 (2004)CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Hua Wang
    • 1
  • Zhu Huang
    • 1
  • Ji-wen Xu
    • 1
  • Ling Yang
    • 1
  • Ming-fang Ren
    • 1
  1. 1.School of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilinChina

Personalised recommendations