Fabrication and characterization of ZnO film based UV photodetector

  • C. Y. Liu
  • B. P. Zhang
  • Z. W. Lu
  • N. T. Binh
  • K. Wakatsuki
  • Y. Segawa
  • R. Mu
Article

Abstract

ZnO films were deposited on Al2O3 substrates by metalorganic chemical vapor deposition (MOCVD) at temperatures of 400, 450 and 500 °C. The photoconductivity of the films has been analyzed for ultraviolet detector application. The changes in photoresponse and current–voltage (I–V) are correlated with the deposition temperatures and microcrystalline structures. The study suggested that the photoresponse originating from bulk- and surface-related processes. For a film deposited at 400 °C, a 1 ms fast rising time and a 5 ms fall time were observed. The photoresponsivity is ∼24 A/W with a 3 V bias.

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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • C. Y. Liu
    • 1
    • 2
  • B. P. Zhang
    • 3
  • Z. W. Lu
    • 4
  • N. T. Binh
    • 2
  • K. Wakatsuki
    • 2
  • Y. Segawa
    • 2
  • R. Mu
    • 5
  1. 1.Department of PhysicsTonghua Teachers’ CollegeTonghuaChina
  2. 2.Photodynamics Research CenterThe Institute of Physical and Chemical Research (RIKEN)SendaiJapan
  3. 3.Department of Physics and Semiconductor Photonics Research CenterXiamen UniversityXiamenP.R. China
  4. 4.State Key Laboratory of Applied OpticsChangchun Institute of Optics and Fine Mechanics and Physics, CASChangchunChina
  5. 5.Department of PhysicsFisk UniversityNashvilleUSA

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