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Cathodoluminescent investigations of In x Ga1−x N layers

  • Yana V. DomrachevaEmail author
  • Valentin N. Jmerik
  • Tatiana B. Popova
  • Maria V. Zamoryanskaya
Article

Abstract

The aim of this work was the investigation of the InGaN epilayers of various contents and various thickness; namely the influence of these two factors upon the cathodoluminescent (CL) properties. The studied epilayers were grown by plasma assisted molecular beam epitaxy. The samples were studied by electron probe microanalysis, CL, X-ray diffraction (XRD), and scanning electron microscopy (SEM). Some interesting peculiarities of CL spectra were obtained; the nature of the CL bands is discussed.

Keywords

Narrow Peak Electron Beam Current Scanning Electron Microscopy Data Critical Layer Thickness Plasma Assisted Molecular Beam Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

Authors thank personally Mrs. M. A. Jagovkina for XRD measurements. The work was performed at the Joint research center “Material science and characterization in advanced technology” (St. Petersburg, Russia) and was supported in part by Russian Academy of Science (Program of Fundamental Researches 06–02-17306, 07-02-12233-ofi; Program of Fundamental Researches of Presidium of RAS “Quantum nanostructures”).

References

  1. 1.
    M.D. Mcclusky, C.G. Van de Walle, C.P. Master, L.T. Romano, N.M Johnson, Appl. Phys. Lett. 72, 2725 (1998)CrossRefGoogle Scholar
  2. 2.
    S. Einfeldt, T. Böttcher, D. Hommel, H. Selke, P.L. Ryder, F. Bertram, T. Riemann, D. Rudloff, J. Christen, MRS Internet J. Nitride Semicond. Res. 4S1, G3.33 (1999)Google Scholar
  3. 3.
    J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Obloh, K.-H. Bachem, MRS Internet J. Nitride Semicond. Res. 4S1, G2.8 (1999)Google Scholar
  4. 4.
    A. Vantomme, M.F. Wu, S. Hogg, G. Langouche, K. Jacobs, I. Moerman, M.E. White, K.P. O’donnell, L. Nistor, J. Van Landuyt, H. Bender, MRS Internet J. Nitride Semicond. Res. 5S1, W11.38 (2000)Google Scholar
  5. 5.
    T.P. Bartel, P. Specht, J.C. Ho, C. Kisielowski, Philos. Mag. 87(13), 1983–1998 (2007)CrossRefGoogle Scholar
  6. 6.
    V. Kachkanov, K.P. O’donnell, S. Pereira, R.W. Martin, Philos. Mag. 87(13), 1999–2017 (2007)CrossRefGoogle Scholar
  7. 7.
    Ya.V. Domracheva, L.A. Bakaleinikov, E.Y. Flegontova, T.B. Popova, M.V. Zamoryanskaya, in Proceedings of EMAS 2007 10th European Workshop on Modern Developments and Applications in Microbeam Analysis, Antwerp, Belgium, 2007Google Scholar
  8. 8.
    S. Pereira, M.R. Correia, E. Pereira, K.P. O’donnell, C. Trager-Cowan, F. Sweeney, E. Alves, Phys. Rev. B 64, 205311 (2001)CrossRefGoogle Scholar
  9. 9.
    S.V. Ivanov, V.N. Jmerik, T.V. Shubina, S.B. Listoshin, A.M. Mizerov, A.A. Sitnikova, M.H. Kim, M. Koike, B.J. Kim, P.S. Kop’ev, J. Crystal Growth 465, 301–302 (2007)Google Scholar
  10. 10.
    M.V. Zamoryanskaya, S.G. Konnikov, A.N. Zamoryanskii, Instrum. Exp. Tech. 47, 477 (2004)CrossRefGoogle Scholar
  11. 11.
    R. People, J.C. Bean, Appl. Phys. Lett. 47, 322 (1985)CrossRefGoogle Scholar
  12. 12.
    M.D. Mccluskey, C.G. Van de Walle, L.T. Romano, B.S. Krusor, N.M. Johnson, J. Appl. Phys. 93, 4340 (2003)CrossRefGoogle Scholar
  13. 13.
    Y-.K. Kuo, W.-W. Lin, J. Lin, Jpn. J. Appl. Phys. 40, 3157 (2001)CrossRefGoogle Scholar
  14. 14.
    J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Obloh, K.-H. Bachem, MRS Internet J. Nitride Semicond. Res. 4S1, G2.8 (1999)Google Scholar
  15. 15.
    J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager, E.E. Haller, H. Lu, W.J. Schaff, Appl. Phys. Lett. 80(25), 4741–4743 (2002)CrossRefGoogle Scholar
  16. 16.
    A.S. Zubrillov, J.V. Melnikov, D.V. Cvetkov, V.E. Bugrov, A.N. Nikolaev, S.I. Stepanov, V.A. Dmitriev, Semicondutors 31, 616 (1997)Google Scholar
  17. 17.
    C.C. YANG, S.-W. FENG et al., in Proceedings of SPIE, vol. 4280 (2001)Google Scholar
  18. 18.
    D.S. Sizov, E.E. Zavarin, N.N. Ledentsov, V.V. Lundin, Y.G. Musikhin, V.S. Sizov, R.A. Suris, A.F. Tsatsul’nikov, Semiconductors 41, 575 (2007)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • Yana V. Domracheva
    • 1
    Email author
  • Valentin N. Jmerik
    • 1
  • Tatiana B. Popova
    • 1
  • Maria V. Zamoryanskaya
    • 1
  1. 1.Ioffe Physico-Technical InstituteSt. PetersburgRussia

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