Light emission in silicon nanostructures

Article

DOI: 10.1007/s10854-007-9552-6

Cite this article as:
Lockwood, D.J. J Mater Sci: Mater Electron (2009) 20(Suppl 1): 235. doi:10.1007/s10854-007-9552-6

Abstract

The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics and, more recently, in photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects are assessed for applications in silicon-based photonics.

Keywords

Silicon Nanocrystals Quantum wells Quantum wires Quantum dots  Quantum confinement Silicon oxide Luminescence Photoluminescence Electroluminescence Band gap Light emission Optoelectronics Photonics 

Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  1. 1.Institute for Microstructural SciencesNational Research CouncilOttawaCanada

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