Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains

  • V. V. Strelchuk
  • Yu. I. MazurEmail author
  • Zh. M. Wang
  • M. Schmidbauer
  • O. F. Kolomys
  • M. Ya. Valakh
  • M. O. Manasreh
  • G. J. Salamo


Using polarized Raman spectroscopy and high resolution X-ray diffraction we have investigated self-organized In0.45Ga0.55As quantum-dot chains in InGaAs/GaAs multilayer structures. It is shown that the formation of InGaAs QDs in InGaAs/GaAs multilayered structures is accompanied by a strong improvement in the uniformity of size and shapes of QDs as well as vertical alignment and lateral ordering. At mean densities, extended chains of QDs (up to 5 μm) appear along the \( [1\bar 10] \) direction; however, increased ordering of QDs along the [110] direction could be observed, too. For the first time, InGaAs dot-chains were investigated using polarized Raman scattering. Observation of optical phonons localized in InGaAs QDs and two-dimensional (2D) layers is demonstrated. An obvious anisotropy in the intensity of Raman modes was observed when the electric field vector of the exciting laser beam is parallel or perpendicular to the wire-like axis \( [1\bar 10] \) of dot-chains. This effect may be related to symmetry lowering effects and real anisotropic geometry of the QDs and 2D wetting layers.


GaAs Raman Spectrum Phonon Line Reciprocal Lattice Point GaAs Matrix 
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  1. 1.
    Semiconductor Quantum Dots: Physics, Spectroscopy and Applications, ed. by Y. Masumoto, T. Takagahara. Nanoscience and Technology (Springer-Verlag, Berlin, Heidelberg, New York, 2002), p. 486Google Scholar
  2. 2.
    V.A. Shchukin, N.N. Ledentsov, D. Bimberg, Epitaxy of Nanostructures. (Springer-Verlag, Berlin Heidelberg New York, 2004), p. 387Google Scholar
  3. 3.
    Q. Xie, A. Madhukar, P. Chen, N.P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995)CrossRefGoogle Scholar
  4. 4.
    J. Tersoff, C. Teichert, M.G. Lagally, Phys. Rev. Lett. 76, 1675 (1996)CrossRefGoogle Scholar
  5. 5.
    M. Strassburg, V. Kutzer, U.W. Pohl, A. Hoffmann, I. Broser, N.N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I.L. Krestnikov, M.V. Maximov, P.S. Kopév, Z.I. Alferov, Appl. Phys. Lett. 72, 942 (1998)CrossRefGoogle Scholar
  6. 6.
    V. Holý, G. Springholz, M. Pinczolits, G. Bauer, Phys. Rev. Lett. 83, 356 (1999)CrossRefGoogle Scholar
  7. 7.
    G. Springholz, V. Holy, M. Pinczolits, G. Bauer, Science 282, 734 (1998)CrossRefGoogle Scholar
  8. 8.
    Yu.I. Mazur, W.Q. Ma, X. Wang, Z.M. Wang, G.J. Salamo, M. Xiao, T.D. Mishima, M.B. Johnson, Appl. Phys. Lett. 83, 987 (2003)CrossRefGoogle Scholar
  9. 9.
    M. Schmidbauer, Th. Wiebach, H. Raidt, M. Hanke, R. Köhler, H. Wawra, Phys. Rev. B 58, 10523 (1998)CrossRefGoogle Scholar
  10. 10.
    M.Ya. Valakh, M.P. Lisitsa, V.V. Strelchuk, N.V. Vuychik, S.V. Ivanov, A.A. Toropov, T.V. Shubina, P.S. Kop’ev, Semiconductors 37, 1336 (2003)CrossRefGoogle Scholar
  11. 11.
    J. Groenen, C. Priester, R. Carles, Phys. Rev. B 60, 16013 (1999)CrossRefGoogle Scholar
  12. 12.
    I. Rasnik, M.J.S.P. Brasil, F. Cerdeira, C.A.C. Mendonc, M.A. Cotta, J. Appl. Phys. 87, 1165 (2000)CrossRefGoogle Scholar
  13. 13.
    M. Hanke, D. Grigoriev, M. Schmidbauer, P. Schäfer, R. Köhler, U.W. Pohl, R.L. Sellin, D. Bimberg, N.D. Zakharov, P. Werner, Physica E 21, 684 (2004)CrossRefGoogle Scholar
  14. 14.
    M. Schmidbauer, X-Ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures, Vol. 199 of Springer Tracts in Modern Physics (Springer, Berlin, Heidelberg, 2004)Google Scholar
  15. 15.
    O. Yefanov, V. Kladko, O. Gudymenko, V. Strelchuk, Yu. Mazur, Zh. Wang, G. Salamo, Phys. Stat. Sol. (a) 203, 154 (2006)CrossRefGoogle Scholar
  16. 16.
    V.V. Strelchuk, V.P. Kladko, O.M. Yefanov, O.F. Kolomys, O.I. Gudymenko, M.Ya. Valakh, Yu.I. Mazur, Z.M. Wang, G.J. Salamo, Semiconduct. Phys. Quant. Electr. Optoelectr. 8, 36 (2005)Google Scholar
  17. 17.
    W.J. Choi, H. Rho, J.D. Song, J.I. Lee, Y.H. Cho, Physica E 26, 115 (2005)CrossRefGoogle Scholar
  18. 18.
    Yu.I. Masur, Z.M. Wang, G.J. Salamo, V.V. Strelchuk, V.P. Kladko, V.F. Machulin, M.Ya. Valakh, M.O. Manasreh, J. Appl. Phys. 99, 023517 (2006)CrossRefGoogle Scholar
  19. 19.
    J. Groenen, R. Carles, G. Landa, C. Guerret-Piécourt, C. Fontaine, M. Gendry, Phys. Rev. B 58, 10452 (1998)CrossRefGoogle Scholar
  20. 20.
    J. Groenen, A. Mlayah, R. Carles, A. Ponchet, A. Le Corre, S. Salaun, Appl. Phys. Lett. 69, 943 (1996)CrossRefGoogle Scholar
  21. 21.
    I. Kegel, T.H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, J.M. Garcia, P.M. Petroff, Phys. Rev. Lett. 85, 1694 (2000)CrossRefGoogle Scholar
  22. 22.
    N. Liu, J. Tersoff, O. Baklenov, A.L. Holmes Jr., C.K. Shih, Phys. Rev. Lett. 84, 334 (2000)CrossRefGoogle Scholar
  23. 23.
    S. Kret, T. Benabbas, C. Delamarre, Y. Androussi, A. Dubon, J.Y. Laval, A. Lefebvre, J. Appl. Phys. 86, 1988 (1999)CrossRefGoogle Scholar
  24. 24.
    H.K. Shin, D.J. Lockwood, C. Lacelle, P.J. Poole, J. Appl. Phys. 88, 6423 (2000) and references thereinCrossRefGoogle Scholar
  25. 25.
    J. Menendes, M. Cardona, Phys. Rev. B 31, 3696 (1985)CrossRefGoogle Scholar
  26. 26.
    P. Parayantal, F.N. Pollak, Phys. Rev. Lett. 52, 1822 (1984)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • V. V. Strelchuk
    • 1
    • 2
  • Yu. I. Mazur
    • 1
    Email author
  • Zh. M. Wang
    • 1
  • M. Schmidbauer
    • 3
  • O. F. Kolomys
    • 2
  • M. Ya. Valakh
    • 2
  • M. O. Manasreh
    • 4
  • G. J. Salamo
    • 1
  1. 1.Department of PhysicsUniversity of ArkansasFayettevilleUSA
  2. 2.Lashkaryov Institute of Semiconductor PhysicsNAS of UkraineKyivUkraine
  3. 3.Institut für KristallzüchtungBerlinGermany
  4. 4.Department of Electrical EngineeringUniversity of ArkansasFayettevilleUSA

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