Near-field scanning optical microscopy of quantum dot broad area laser diodes
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Near-field scanning optical microscopy (NSOM) studies of self-assembled InAs quantum dot broad area laser diodes (QD-BALDs) with different active layer were performed. The high resolution (<100 nm) of NSOM provides a detailed mapping of the laser output from the active region. Representative near-field electroluminescence (EL) spectra taken the cross section of the QD-BALD structures below and above the lasing threshold are plotted. Moreover, spatially resolved near-field scanning images of the waveguide are obtained by collecting the EL as the tip is scanned across the surface. Such near-field measurements show a relationship between laser emission and different active layer structure.
KeywordsActive Layer Atomic Layer Epitaxy Lower Threshold Current Density Active Layer Structure Reemission Effect
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