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Phase change memory materials–composition, structure, and properties

  • M. FrumarEmail author
  • B. Frumarova
  • T. Wagner
  • M. Hrdlicka
Article

Abstract

The phase change memory materials (PCMM), their composition, structure, properties and crystallization are discussed. Formation of intermediary phases with high density of substitutional defects during high-speed crystallization of their amorphous forms is suggested.

Keywords

GaSb PbTe Bi2Te3 Bi2Se3 Sb2Te3 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

Ministry of Education of Czech Rep. is acknowledged for financial support, especially for projects of Research Centres (presently LC523) and Research project 002167501, Grant Agency of Czech Republic, for grants 203/05/054 and 203/06/0627. The EC is acknowledged for project IST-2004–017406 CAMELS in the program FP6; NSF, USA for grant of IMI NFG, the Internat. Materials Inst., Pennsylvania. At last but not least the Univ. of Pardubice is acknowledged for long-term support.

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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • M. Frumar
    • 1
    Email author
  • B. Frumarova
    • 2
  • T. Wagner
    • 1
  • M. Hrdlicka
    • 1
  1. 1.Research Centre and Department of General and Inorganic ChemistryUniversity of PardubicePardubiceCzech Republic
  2. 2.Joint Lab. of Solid State Chem. Inst. Macromol. Chemistry Acad. Sci. of Czech Rep.University of PardubicePardubiceCzech Republic

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