Optical studies on MgxZn1−xO wide band gap semiconductor in the perspective of phase equilibrium

Article

DOI: 10.1007/s10854-007-9169-9

Cite this article as:
Ghosh, R. & Basak, D. J Mater Sci: Mater Electron (2007) 18(Suppl 1): 141. doi:10.1007/s10854-007-9169-9

Abstract

MgxZn1−xO (x = 0.0–0.20) ternary alloyed thin films have been deposited by sol-gel technique at 550 °C. The studies on the change in c-axis lattice parameter, PL spectra, optical absorption coefficient, and band gap values suggest that the solubility limit of MgO in MgxZn1−xO lies within the composition range 0.05 < x < 0.08. Optical studies on the annealed films confirm the formation of equilibrium solid solution up to x = 0.05 and the phase for the composition range 0.05 < x ≤ 0.20 to be in the non-equilibrium range.

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© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Department of Solid State PhysicsIndian Association for the Cultivation of ScienceJadavpur, KolkataIndia

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