Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices



Hafnium oxide (HfO2) has emerged as the most promising highkdielectric for MOS devices. As-deposited sputtered HfO2 thin films have large number of defects resulting in increased oxide charge and leakage current. In this paper the effect of sputtering voltage, bias sputtering and post deposition thermal annealing is investigated. The I–V and C–V characteristics of the dielectric film are studied employing Al–HfO2–Si MOS capacitor structure. It is found that oxide charge increases with increasing sputtering voltage. Thermal annealing in oxygen reduces the interface/oxide charges and leakage current. It is shown that applying substrate bias during film deposition leakage current is further reduced by an order of magnitude. The microstructure of thin film is examined by AFM. The reduction in surface roughness with bias sputtering is shown. The experimental results are presented and discussed for device application.


  1. 1.
    International Technology Road Map for Semiconductors (SanJose, CA, 1999) p. 105Google Scholar
  2. 2.
    M. Housa, High k gate dielectric, IPO, Bristal (2004) Chapter 1Google Scholar
  3. 3.
    G.D. Wilk, R. Wallance, G. Anthony, J. Appl. Phys. 87, 5243 (2001)CrossRefGoogle Scholar
  4. 4.
    Y.H. Kim, J.C. Lee, Microelectronics & Relaib. 44, 183 (2004)CrossRefGoogle Scholar
  5. 5.
    H. Kim, P.C. McLntyre, K.C. Saraswat, Appl. Phys. Letts. 82, 106 (2003)CrossRefGoogle Scholar
  6. 6.
    L. Pereira, A. Marques, H. Aguas, N Netev, S. Georgiev, E. Fortunato, R. Martins, Mat. Sci. & Engg. B 109, 89 (2004)Google Scholar
  7. 7.
    H. Gruger, C.H. Kunath, E. Kurth, S. Sorge, W. Pufe, T. Pechstein, Thin Solid Films 447, 509 (2004)CrossRefGoogle Scholar
  8. 8.
    B. Sen, C.K. Sarkar, H. Wong, M. Chan, C.W. Kok, Solid State Elect. 50, 237 (2006)CrossRefGoogle Scholar
  9. 9.
    R. Puthenkovilakam, M. Sawkar, J.P. Chang, Appl. Phys. Lett. 86, 202902 (2005)CrossRefGoogle Scholar
  10. 10.
    B.H. Lee, L. Kang, J.C. Lee, Appl. Phys. Lett. 76, 1926 (2000)CrossRefGoogle Scholar
  11. 11.
    R. Garg, N.A. Chowdhury, D. Misra, J. Electrochem. Soc. 151, 1 (2004)CrossRefGoogle Scholar
  12. 12.
    B.H. Lee, L. Kang, J.C. Lee, Appl. Phys. Lett. 76, 1926 (2000)CrossRefGoogle Scholar
  13. 13.
    Y. Homma, S. Tsunekawa, J. Electro. Chem. Soc. 132, 1466 (1985)CrossRefGoogle Scholar
  14. 14.
    H. Wong, K.L. Ng, M.C. Poon, C.W. Kok, J. Vac. Sci. & Techno. B22, 1094 (2004)CrossRefGoogle Scholar
  15. 15.
    J. Robertson, Solid State Electron. 49, 283 (2005)CrossRefGoogle Scholar
  16. 16.
    C.T. Kuo, R. Kwor, K.M. Jones, Thin Solid Films 213, 257 (1992)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Microelectronics AreaCentral Electronics Engineering Research InstitutePilaniIndia

Personalised recommendations