Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias

  • Erik V. Johnson
  • Nazir P. Kherani
  • Stefan Zukotynski


A series of hydrogenated microcrystalline films were grown by a novel thin film deposition method using the Saddle Field Plasma Enhanced Chemical Vapour Deposition system. We show that the surface potential during growth strongly affects the microcrystalline character of the films, as quantified by Raman scattering. This effect can be reproduced on both conductive and non-conductive substrates. Films grown close to the threshold for microcrystalline growth exhibit laser-induced crystallization at low laser intensities.


SnO2 Plasma Enhance Chemical Vapour Deposition Transverse Optical Substrate Bias Voltage Laser Crystallization 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



The authors acknowledge the support of the Natural Sciences and Engineering Research Council of Canada, ARISE Technologies, and Materials and Manufacturing Ontario.


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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • Erik V. Johnson
    • 1
    • 2
  • Nazir P. Kherani
    • 1
  • Stefan Zukotynski
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of TorontoTorontoCanada
  2. 2.LPICM, École PolytechniquePalaiseau CedexFrance

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