Advertisement

Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias

  • Erik V. Johnson
  • Nazir P. Kherani
  • Stefan Zukotynski
Article

Abstract

A series of hydrogenated microcrystalline films were grown by a novel thin film deposition method using the Saddle Field Plasma Enhanced Chemical Vapour Deposition system. We show that the surface potential during growth strongly affects the microcrystalline character of the films, as quantified by Raman scattering. This effect can be reproduced on both conductive and non-conductive substrates. Films grown close to the threshold for microcrystalline growth exhibit laser-induced crystallization at low laser intensities.

Keywords

SnO2 Plasma Enhance Chemical Vapour Deposition Transverse Optical Substrate Bias Voltage Laser Crystallization 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

The authors acknowledge the support of the Natural Sciences and Engineering Research Council of Canada, ARISE Technologies, and Materials and Manufacturing Ontario.

References

  1. 1.
    J. Meier et al., Mater. Res. Soc. Symp. Proc. 420, 3 (1996)Google Scholar
  2. 2.
    A. Matsuda, Thin Solid Films 337, 1 (1999)CrossRefGoogle Scholar
  3. 3.
    B. Kalache, A.I. Kosarev, R. Vanderhaghen, P. Roca I Cabarrocas, J. Non-Cryst. Solids 299–302, 63 (2002)CrossRefGoogle Scholar
  4. 4.
    V. Dalal, J. Graves, J. Leib, Appl.Phys.Lett. 85, 1413 (2004)CrossRefGoogle Scholar
  5. 5.
    E. Johnson, N.P. Kherani, S. Zukotynski, Mater. Res. Soc. Symp. Proc. 862, A19.6 (2005)Google Scholar
  6. 6.
    T. Allen, I. Milostnaya, D. Yeghikyan, K. Leong, F. Gaspari, N. Kherani, T. Kosteski, and S. Zukotynski, Mater. Res. Soc. Symp. Proc. 762, A6.10 (2003).Google Scholar
  7. 7.
    I. Milostnaya, T. Allen, F. Gaspari, N. Kherani, D. Yeghikyan, W. Roes, T. Kosteski, S. Zukotynski, Mater. Res. Soc. Symp. Proc. 762, A6.15 (2003)Google Scholar
  8. 8.
    C.A.M. De Vries, W.G.M. Van Den Hoek, J. Appl. Phys. 58, 2074 (1985)CrossRefGoogle Scholar
  9. 9.
    E. Bustarret, M.A. Hachicha, M. Brunel, Appl. Phys. Lett. 52, 1675 (1988)CrossRefGoogle Scholar
  10. 10.
    D. Beeman, R. Tsu, M.F. Thorpe, Phys. Rev. B 32, 874 (1985)CrossRefGoogle Scholar
  11. 11.
    R. Tsu, J. Gonzalez-Hernandez, S.S. Chao, S.C. Lee, K. Tanaka, Appl. Phys. Lett. 40, 534 (1982)CrossRefGoogle Scholar
  12. 12.
    A.T. Voutsas, M.K. Hatalis, J. Boyce, A. Chiang, J. Appl. Phys. 78, 6999 (1995)CrossRefGoogle Scholar
  13. 13.
    P. Roca I Cabarrocas, N. Layadi, T. Heitz, B. Drévillon, I. Solomon, Appl. Phys. Lett. 66, 3609 (1995)CrossRefGoogle Scholar
  14. 14.
    Y. He, C. Yin, G. Cheng, L. Wang, X. Liu, G.Y. Hu, J. Appl. Phys. 75, 797 (1994)CrossRefGoogle Scholar
  15. 15.
    S. Vepøek, F. -A. Sarott, Z. Iqbal, Phys. Rev. B 36, 3344 (1987)CrossRefGoogle Scholar
  16. 16.
    G. Viera, S. Huet, L. Boufendi, J. Appl. Phys. 90, 4175 (2001)CrossRefGoogle Scholar
  17. 17.
    H.S. Mavi, A.K. Shukla, S.C. Abbi, K.P. Jain, J. Appl. Phys. 66, 5322 (1989)CrossRefGoogle Scholar
  18. 18.
    K.P. Jain, A.K. Shukla, R. Ashokan, S.C. Abbi, M. Balkanski, Phys. Rev. B 32, 6688 (1985)CrossRefGoogle Scholar
  19. 19.
    A.K. Shukla, K.P. Jain, Phys. Rev. B 35 9240 (1987)CrossRefGoogle Scholar
  20. 20.
    A. Sunda-Meya, D. Gracin, J. Dutta, B. Vlahovic, R.J. Nemanich, Mater. Res. Soc. Symp. Proc. 664, A6.9.1 (2001)Google Scholar
  21. 21.
    P. Lengsfeld, N.H. Nickel, W. Fuhs, Appl. Phys. Lett. 76, 1680 (2000)CrossRefGoogle Scholar
  22. 22.
    C. Santato, G. Mattei, W. Ruihua, F. Mecarini, J. Appl. Phys. 95, 5366 (2004)CrossRefGoogle Scholar
  23. 23.
    J.G. Maillou, E.L. Mathé, J.C. Desoyer, S. De Unamuno, E. Fogarassy, Appl. Surf. Sci. 43, 150 (1989)CrossRefGoogle Scholar
  24. 24.
    D. Toet, P. M. Smith, T. W. Sigmon, T. Takehara, C.C. Tsai, W. R. Harshbarger, M.O. Thompson, J. Appl. Phys. 85, 7914 (1999)CrossRefGoogle Scholar
  25. 25.
    A. Hadjadj, L. Boufendi, S. Huet, S. Schelz, P. Roca I Cabarrocas, H. Estrade-Szwarckopf, and B. Rousseau, J. Vac. Sci. Technol. A 18, 529 (2000)CrossRefGoogle Scholar
  26. 26.
    C. Smit, R.A.C.M.M. Van Swaaij, H. Donker, A.M.H.N. Petit, W.M.M. Kessels, M.C.M. Van De Sanden, J. Appl. Phys. 94, 3582 (2003)CrossRefGoogle Scholar
  27. 27.
    G. Viera, P. Roca I Cabarrocas, J. Costa, S. Martinez, E. Bertran, Mater. Res. Soc. Symp. Proc. 507, (1998) 933Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • Erik V. Johnson
    • 1
    • 2
  • Nazir P. Kherani
    • 1
  • Stefan Zukotynski
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of TorontoTorontoCanada
  2. 2.LPICM, École PolytechniquePalaiseau CedexFrance

Personalised recommendations