Characterization of CuAlO2 films prepared by dc reactive magnetron sputtering

  • A. Sivasankar Reddy
  • P. Sreedhara Reddy
  • S. Uthanna
  • G. Mohan Rao
Article
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Accepted:

Abstract

Thin films of copper aluminum oxide (CuAlO2) were prepared on glass substrates by dc magnetron sputtering at a substrate temperature of 523 K under various oxygen partial pressures in the range 1 × 10−4–3 × 10−3 mbar. The dependence of cathode potential on the oxygen partial pressure was explained in terms of oxidation of the sputtering target. The influence of oxygen partial pressure on the structural, electrical and optical properties was systematically studied. p-Type CuAlO2 films with polycrystalline nature, electrical resistivity of 3.1 Ω cm, Hall mobility of 13.1 cm2 V−1 s−1 and optical band gap of 3.54 eV were obtained at an oxygen partial pressure of 6 × 10−4 mbar.

Keywords

Electrical Resistivity Cu2O Oxygen Partial Pressure Optical Transmittance Cathode Potential 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • A. Sivasankar Reddy
    • 1
  • P. Sreedhara Reddy
    • 1
  • S. Uthanna
    • 1
  • G. Mohan Rao
    • 1
    • 2
  1. 1.Department of PhysicsSri Venkateswara UniversityTirupatiIndia
  2. 2.Department of InstrumentationIndian Institute of ScienceBangaloreIndia

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