Advertisement

Journal of Materials Science

, Volume 54, Issue 9, pp 6807–6814 | Cite as

Controllable growth of vertical ReS2 nanosheets and nanorods by vapor transport method

  • Yang Liu
  • Qinwei An
  • Xianquan MengEmail author
Ceramics
  • 8 Downloads

Abstract

As an emerging two-dimensional transition metal dichalcogenide, rhenium disulfide (ReS2) has been attracting more and more attention for its unique properties and great potential in the design of the electronic and optoelectronic devices. Here, for the first time, large-size ReS2 nanosheets with area of over 35 μm × 20 μm were successfully synthesized via vapor transport (VT) method. Moreover, the growth of ReS2 nanosheets via VT method was demonstrated to be effective on Si, SiO2, and Au substrate, which would further expand the application of ReS2 during the design of devices on different substrates. Besides, the effect of Ar gas flow on the growth of ReS2 nanosheets was systematically investigated. Furthermore, it is the first time the 1D ReS2 nanorods have been synthesized using the VT method. Based on the experiment results, the growth mechanism of ReS2 nanosheets and nanorods was proposed. It is believed that the research may pave a way for the growth of large-size ReS2 nanosheets and the wider application of ReS2 nanostructures.

Notes

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China under Grant (No. U1631110).

Compliance with ethical standards

Conflict of interest

This contribution has been approved by all coauthors, it has not been published before, it is not under consideration for publication anywhere else, and there is no conflict of interest.

Supplementary material

10853_2019_3395_MOESM1_ESM.docx (1 mb)
Supplementary material 1 (DOCX 1063 kb)

References

  1. 1.
    Wang QH, Kalantar-Zadeh K, Kis A, Coleman JN, Strano MS (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol 7:699–712Google Scholar
  2. 2.
    Chhowalla M, Shin HS, Eda G, Li LJ, Loh KP, Zhang H (2013) The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat Chem 5:263–275Google Scholar
  3. 3.
    Butler SZ, Hollen SM, Cao L et al (2013) Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7:2898–2926Google Scholar
  4. 4.
    Ferrari AC, Bonaccorso F, Fal’ko V et al (2015) Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. Nanoscale 7:4598–4810Google Scholar
  5. 5.
    Mak KF, Shan J (2016) Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat Photonics 10:216–226Google Scholar
  6. 6.
    He R, Yan JA, Yin ZY et al (2016) Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy. Nano Lett 16:1404–1409Google Scholar
  7. 7.
    Tongay S, Sahin H, Ko C et al (2014) Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nat Commun 5:3252Google Scholar
  8. 8.
    Pradhan NR, McCreary A, Rhodes D et al (2015) Metal to insulator quantum-phase transition in few-layered ReS2. Nano Lett 15:8377–8384Google Scholar
  9. 9.
    Liu FC, Zheng SJ, He XX et al (2016) Highly sensitive detection of polarized light using anisotropic 2D ReS2. Adv Funct Mater 26:1169–1177Google Scholar
  10. 10.
    Chenet DA, Aslan OB, Huang PY et al (2015) In-plane anisotropy in mono- and few-layer ReS2 probed by Raman spectroscopy and scanning transmission electron microscopy. Nano Lett 15:5667–5672Google Scholar
  11. 11.
    Feng YQ, Zhou W, Wang YJ et al (2015) Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry. Phys Rev B 92:2095–2099Google Scholar
  12. 12.
    Lin YC, Komsa HP, Yeh CH et al (2015) Single-layer ReS2: two-dimensional semiconductor with tunable in-plane anisotropy. ACS Nano 9:11249–11257Google Scholar
  13. 13.
    Lorchat E, Froehlicher G, Berciaud S (2016) Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in N-layer ReSe2 and ReS2. ACS Nano 10:2752–2760Google Scholar
  14. 14.
    Zhang Q, Wang WJ, Zhang JQ et al (2018) Highly efficient photocatalytic hydrogen evolution by ReS2 via a two-electron catalytic reaction. Adv Mater 30:1707123Google Scholar
  15. 15.
    Fujita T, Ito Y, Tan YW, Yamaguchi H et al (2014) Chemically exfoliated ReS2 nanosheets. Nanoscale 6:12458–12462Google Scholar
  16. 16.
    Liu EF, Long MS, Zeng JW et al (2016) High responsivity phototransistors based on few-layer ReS2 for weak signal detection. Adv Funct Mater 26:1938–1944Google Scholar
  17. 17.
    Keyshar K, Gong YJ, Ye GL et al (2015) Chemical vapor deposition of monolayer rhenium disulfide (ReS2). Adv Mater 27:4640–4648Google Scholar
  18. 18.
    Hafeez M, Gan L, Li HQ, Ma Y, Zhai TY (2016) Large area bilayer ReS2 film/multilayer ReS2 flakes synthesized by chemical vapor deposition for high performance photodetectors. Adv Funct Mater 26:4551–4560Google Scholar
  19. 19.
    Li XB, Cui FF, Feng QL et al (2016) Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application. Nanoscale 8:18956–18962Google Scholar
  20. 20.
    He XX, Liu FC, Hu P et al (2015) Chemical vapor deposition of high-quality and atomically layered ReS2. Small 11:5423–5429Google Scholar
  21. 21.
    Al-Dulaimi N, Lewis EA, Lewis DJ et al (2016) Sequential. bottom-up and top-down processing for the synthesis of transition metal dichalcogenide nanosheets: the case of rhenium disulfide (ReS2). Chem Commun 52:7878–7881Google Scholar
  22. 22.
    Cui FF, Wang C, Li XB et al (2016) Tellurium-assisted epitaxial growth of large-area, highly crystalline ReS2 atomic layers on mica substrate. Adv Mater 28:5019–5024Google Scholar
  23. 23.
    Wagner CD, Muilenberg GE (1979) Handbook of X-ray photoelectron spectroscopy. Perkin-Elmer Corp, Eden PrairieGoogle Scholar
  24. 24.
    Jariwala B, Voiry D, Jindal A et al (2016) Synthesis and characterization of ReS2 and ReSe2 layered chalcogenide single crystals. Chem Mater 28:3352–3359Google Scholar
  25. 25.
    Manzoor U, Kim DK (2009) Size control of ZnO nanostructures formed in different temperature zones by varying Ar flow rate with tunable optical properties. Phys E 41:500–505Google Scholar
  26. 26.
    Ye CH, Fang XS, Hao YF, Teng XM, Zhang LD (2005) Zinc oxide nanostructures: morphology derivation and evolution. J Phys Chem B 109:19758–19765Google Scholar
  27. 27.
    Kumar P, Viswanath B (2017) Horizontally and vertically aligned growth of strained MoS2 layers with dissimilar wetting and catalytic behaviors. CrystEngComm 19:5068–5078Google Scholar
  28. 28.
    Park JH, Choi HJ, Choi YJ, Sohn SH, Park JG (2004) Ultrawide ZnO nanosheets. J Mater Chem 14:35–36Google Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Center for Nanoscience and Nanotechnology, School of Physics and TechnologyWuhan UniversityWuhanPeople’s Republic of China
  2. 2.Hubei Nuclear Solid Physics Key LaboratoryWuhanPeople’s Republic of China

Personalised recommendations