Journal of Materials Science

, Volume 52, Issue 23, pp 13522–13532 | Cite as

Facile microwave approach to controllable boron nitride quantum dots

  • Lidan Fan
  • Yuming Zhou
  • Man He
  • Yuan Tong
  • Xi Zhong
  • Jiasheng Fang
  • Xiaohai Bu
Electronic materials
First Online:
Received:
Accepted:
  • 380 Downloads

Abstract

Boron nitride quantum dots (BNQDs), as promising metal-free quantum dots with unique photoelectric properties, have been controllably fabricated by a facile and high-efficiency microwave irradiation technique in this work. Though a number of attempts have been reported so far, it remains challenging to explore an effective approach to synthesize high-quality BNQDs with uniform size, well dispersion and high quantum yield (QY). Microwave irradiation strategy is identified as an advanced and beneficial method not only for high-efficiency energy inputting but also time-saving in comparison with the reported solvothermal process. Encouragingly, the particle size and QY of BNQDs can be well controlled by adjusting microwave reaction temperature as well as duration time. The average diameter of the as-prepared blue luminescent BNQDs ranges from 1.98 to 7.05 nm with QY up to 23.44%. Furthermore, attributed to the unique nanostructure, quantum confinement effect, and high dielectric loss, the as-prepared BNQDs exhibits an optimal reflection loss of −19.6 dB at 8.9 GHz with a broad effective absorption bandwidth of 5.02 GHz in the frequency range of 2–18 GHz, demonstrating as potential microwave absorption material in electromagnetic interference field.

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Notes

Acknowledgements

The authors are grateful to the financial supports of National Natural Science Foundation of China (51673040, 21306023, 21676056 and 21376051), The Prospective Joint Research Project of Jiangsu Province (BY2016076-01), The Fundamental Research Funds for the Central Universities (3207046302), and The Fund Project for Transformation of Scientific and Technological Achievements of Jiangsu Province of China (BA2016105).

Compliance with ethical standards

Conflict of interest

The authors declare that there is no conflict of interest.

Supplementary material

10853_2017_1395_MOESM1_ESM.docx (813 kb)
Supplementary material 1 (DOCX 812 kb)

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Copyright information

© Springer Science+Business Media, LLC 2017

Authors and Affiliations

  1. 1.School of Chemistry and Chemical Engineering, Jiangsu Optoelectronic Functional Materials and Engineering LaboratorySoutheast UniversityNanjingPeople’s Republic of China

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