Journal of Materials Science

, Volume 52, Issue 19, pp 11306–11313 | Cite as

Effect of in-plane ordering on dielectric properties of highly {111}-oriented bismuth–zinc–niobate thin films

  • A. Le Febvrier
  • S. Députier
  • V. Demange
  • V. Bouquet
  • A. C. Galca
  • A. Iuga
  • L. Pintilie
  • M. Guilloux-Viry


Bi1.5−xZn0.92−yNb1.5O6.92−δ (BZN) thin films were grown by pulsed laser deposition on two different Pt-covered substrates, namely textured {111}Pt/TiO2/SiO2/(100)Si substrate (Pt/Si) and epitaxial {111}Pt/R-plane sapphire substrate (Pt/sapphire). In both cases, the BZN films present {111} and {100} out-of-plane orientations, in relative ratios of 65:35 on Pt/Si and 80:20 on Pt/sapphire, respectively. The film grown on Pt/Si is textured, while the film deposited on Pt/sapphire presents epitaxial-like relationships with the substrate, for both out-of-plane orientations. Dielectric measurements were taken on both types of thin films, using Pt/BZN/Pt planar capacitor structures. The BZN/Pt/sapphire film presents higher dielectric constant (245 at 100 kHz) and higher tunability (12% at 600 kV/cm) than the BZN/Pt/Si film (200; 6%), while the dielectric losses values are nearly same (~0.05).


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© Springer Science+Business Media, LLC 2017

Authors and Affiliations

  1. 1.Institut des Sciences Chimiques de Rennes, UMR CNRS 6226Université de Rennes 1Rennes CedexFrance
  2. 2.National Institute of Materials PhysicsMagurele, IlfovRomania
  3. 3.Thin Film Physics Group, Department of Physics, Chemistry, and Biology (IFM)Linköping UniversityLinköpingSweden

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