Journal of Materials Science

, Volume 52, Issue 19, pp 11537–11546 | Cite as

Ag composition gradient CuCr0.93Mg0.07O2/Ag/CuCr0.93Mg0.07O2 coatings with improved p-type optoelectronic performances

  • Hui Sun
  • Mohammad Arab Pour Yazdi
  • Sheng-Chi Chen
  • Chao-Kuang Wen
  • Frederic Sanchette
  • Alain Billard
Electronic materials
  • 113 Downloads

Abstract

The optoelectronic properties of Mg-doped CuCrO2 with delafossite structure were enhanced by stacking CuCr0.93Mg0.07O2/Ag/CuCr0.93Mg0.07O2 multilayers. The influences of the deposition time of the Ag and the thickness of the CuCr0.93Mg0.07O2 layers on the film’s performance were investigated. When the stacks were deposited under our deposition conditions, no continuous Ag layer was observed. The diffusion of Ag atoms into the neighboring CuCr0.93Mg0.07O2 layers caused a composition gradient of Ag in the films and caused Cr3+ cations to be replaced by Ag+ cations, which is beneficial for improving the conductivity of the films. When the Ag deposition time was increased, Schottky barriers occurred between Ag nanocrystallites and CuCr0.93Mg0.07O2 grains, lowering the films’ optoelectronic performances. The multilayers’ optoelectronic performances were enhanced when the thickness of the CuCr0.93Mg0.07O2 layers was decreased. Optimal films with a relatively high figure of merit of 2.37 × 10−7 Ω−1 can be achieved when the deposition time of Ag and the thickness of CuCrO2:Mg layers are optimized.

Notes

Acknowledgements

We gratefully acknowledge the China Scholarship Council (No. 201204490126) and Pays de Montbéliard-Agglomération for their financial support of this study.

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.

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Copyright information

© Springer Science+Business Media, LLC 2017

Authors and Affiliations

  • Hui Sun
    • 1
  • Mohammad Arab Pour Yazdi
    • 1
  • Sheng-Chi Chen
    • 2
    • 3
  • Chao-Kuang Wen
    • 4
  • Frederic Sanchette
    • 5
    • 6
  • Alain Billard
    • 1
    • 7
  1. 1.FEMTO-ST UMR 6174, CNRS, UTBM, Site de MontbéliardUniv. Bourgogne Franche-ComtéBelfort CedexFrance
  2. 2.Department of Materials Engineering and Center for Thin Film Technologies and ApplicationsMing Chi University of TechnologyTaipeiTaiwan
  3. 3.Department of Electronic EngineeringChang Gung UniversityTaoyuanTaiwan
  4. 4.Institute of Materials Science and EngineeringNational Taiwan UniversityTaipeiTaiwan
  5. 5.ICD LASMIS Institut Charles Delaunay, Laboratoire des Systèmes Mécaniques et d’Ingénierie Simultanée (UMR CNRS 6279), Pôle Technologique de Haute-ChampagneUTT, Antenne de Nogent-52NogentFrance
  6. 6.LRC CEA-ICD LASMIS, Nogent International Center for CVD Innovation (NICCI), Pôle Technologique de Haute ChampagneUTT Antenne de NogentNogentFrance
  7. 7.LRC CEA/UTBM LIS-HP, Site de MontbéliardBelfort CedexFrance

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