Journal of Materials Science

, Volume 52, Issue 1, pp 391–407 | Cite as

Tuning the configuration of Au nanostructures: from vermiform-like, rod-like, triangular, hexagonal, to polyhedral nanostructures on c-plane GaN

  • Mao Sui
  • Puran Pandey
  • Ming-Yu Li
  • Quanzhen Zhang
  • Sundar Kunwar
  • Jihoon Lee
Original Paper


The systematic control over the configuration, size, and density of Au nanostructures can directly improve or optimize the physical, chemical, and optoelectronic properties and thus the functionality in the related applications. In this work, we successfully demonstrate the systematic configurational transition of self-assembled Au nanostructures on c-plane GaN via the precise control of annealing temperature, deposition amount, and annealing duration. Depending on the control of annealing temperature, self-assembled Au vermiform-like nanostructures are fabricated and evolve into the faceted Au nanorods and Au hexagons with the minimization of overall surface energy based on the Volmer–Weber growth model. With the deposition amount control, the volume-dependent transition of Au nanostructure configurations from triangles to hexagons and then to polyhedral is clearly observed and discussed based on the combinational effects of growth kinetics and surface free energy distribution. The configurational transition from irregular Au clusters to faceted nanostructures is witnessed along with the incremental variation of annealing duration based on the Ostwald ripening.


Annealing Duration Configurational Transition Deposition Amount Hexagonal Configuration Surface Energy Distribution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This project was supported by the National Research Foundation of South Korea (No. 2011-0030821 and 2016R1A1A1A05005009) and in part by the research Grant of Kwangwoon University in 2016.

Supplementary material

10853_2016_339_MOESM1_ESM.pdf (3.6 mb)
Supplementary material 1 (PDF 3692 kb)


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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  1. 1.College of Electronics and InformationKwangwoon UniversityNowon-guSouth Korea
  2. 2.Institute of Nanoscale Science and EngineeringUniversity of ArkansasFayettevilleUSA

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