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Journal of Materials Science

, Volume 50, Issue 10, pp 3795–3802 | Cite as

Nonequivalent-F-induced relaxations in LaF3 single crystals over a broad temperature range

  • Jing Wang
  • Chunchang WangEmail author
  • Xiaohong Sun
  • Jian Zhang
  • Jun Zheng
  • Chao Cheng
  • Hong Wang
  • Yide Li
  • Shouguo Huang
Original Paper
  • 147 Downloads

Abstract

The dielectric properties of LaF3 single crystals were investigated in the temperature range from 110 to 773 K and the frequency range from 100 Hz to 10 MHz. Two thermally activated relaxations (R1 and R2) and a dielectric anomaly (A) were observed. The lower temperature relaxation (R1) was ascribed to a polaronic relaxations due to fluorine ions diffusion within the F1 sublattice and fluorine ions hopping in F1 sublattice. The higher temperature relaxation (R2) is Maxwell–Wagner relaxation due to the blocking of electrodes associated with the ionic exchange between F1 and F2,3 sublattices and among the three nonequivalent sublattices. The anomaly appearing in the highest temperature range is related to the inductive effect arising from the coupled electron-ionic inductive response.

Keywords

LaF3 Dielectric Anomaly Delocalized Carrier Tysonite Structure Spectroscopic Plot 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

We thank financial support from the National Natural Science Foundation of China (Grant No. 11074001) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars from the State Education Ministry. This work was supported in part by the open research fund of key laboratory of MEMS of Ministry of Education, Southeast University of China, and the Doctoral Startup Foundation of Anhui University (Grant No. 33190077).

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Jing Wang
    • 1
  • Chunchang Wang
    • 1
    Email author
  • Xiaohong Sun
    • 1
  • Jian Zhang
    • 2
  • Jun Zheng
    • 3
  • Chao Cheng
    • 3
  • Hong Wang
    • 1
  • Yide Li
    • 1
  • Shouguo Huang
    • 1
  1. 1.Laboratory of Dielectric Functional Materials, School of Physics & Material ScienceAnhui UniversityHefeiPeople’s Republic of China
  2. 2.School of Electronics Science and Applied PhysicsHefei University of TechnologyHefeiPeople’s Republic of China
  3. 3.Center of Modern Experimental TechnologyAnhui UniversityHefeiPeople’s Republic of China

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