Journal of Materials Science

, Volume 48, Issue 7, pp 2829–2835 | Cite as

Ge/SiGe superlattices for thermoelectric energy conversion devices

  • Stefano Cecchi
  • Tanja Etzelstorfer
  • Elisabeth Müller
  • Antonio Samarelli
  • Lourdes Ferre Llin
  • Daniel Chrastina
  • Giovanni Isella
  • Julian Stangl
  • Douglas J. Paul
Energy Materials & Thermoelectrics
First Online:
Received:
Accepted:

Abstract

Ge-rich multiple quantum well heterostructures have been investigated as engineered material for efficient thermoelectric generators monolithically integrated on silicon substrates. Thick Ge/SiGe multilayers on Si substrates designed for lateral thermoelectric devices have been grown and characterized in which electrical and thermal conduction occur parallel to the heterostructure interfaces. In this study, an overview of the investigated structures is presented together with results from X-ray scattering and transmission electron microscopy experiments. These analyses confirm the high quality of the material and the uniformity of the structure over the whole deposited thickness. Important parameters in terms of the optimization of the material quality which could affect thermoelectric properties, such as the interfaces roughness and the threading dislocation density, have also been evaluated. Preliminary electrical and Seebeck coefficient measurements indicate the viability of this material for the realization of thermoelectric devices.

Keywords

Thermoelectric Property Seebeck Coefficient Thermoelectric Generator Multiple Quantum Well Thread Dislocation Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgements

The study was supported by the European Commission through the ICT FET-Proactive Initiative Towards Zero power Project GREEN Silicon (No. 257750) and by the province of Upper Austria. The EC supported also travel expenses for synchrotron beamtime.

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Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  • Stefano Cecchi
    • 1
  • Tanja Etzelstorfer
    • 2
  • Elisabeth Müller
    • 3
  • Antonio Samarelli
    • 4
  • Lourdes Ferre Llin
    • 4
  • Daniel Chrastina
    • 1
  • Giovanni Isella
    • 1
  • Julian Stangl
    • 2
  • Douglas J. Paul
    • 4
  1. 1.L-NESS Politecnico di MilanoPolo Territoriale di ComoComoItaly
  2. 2.Institute of Semiconductor and Solid State PhysicsJohannes Kepler UniversityLinzAustria
  3. 3.Electron Microscopy ETH Zurich (EMEZ)ZurichSwitzerland
  4. 4.School of EngineeringUniversity of GlasgowGlasgowUK

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