Journal of Materials Science

, Volume 47, Issue 5, pp 2384–2389 | Cite as

Far infrared study of local impurity modes of Boron-doped PbTe

  • P. M. Nikolic
  • K. M. Paraskevopoulos
  • G. Zachariadis
  • O. Valasiadis
  • T. T. Zorba
  • S. S. Vujatovic
  • N. Nikolic
  • O. S. Aleksic
  • T. Ivetic
  • O. Cvetkovic
  • V. Blagojevic
  • M. V. Nikolic
Article

Abstract

PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm−1. For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.

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Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • P. M. Nikolic
    • 1
  • K. M. Paraskevopoulos
    • 2
  • G. Zachariadis
    • 3
  • O. Valasiadis
    • 2
  • T. T. Zorba
    • 2
  • S. S. Vujatovic
    • 1
  • N. Nikolic
    • 4
  • O. S. Aleksic
    • 4
  • T. Ivetic
    • 1
  • O. Cvetkovic
    • 5
  • V. Blagojevic
    • 6
  • M. V. Nikolic
    • 4
  1. 1.Institute of Technical Sciences of the Serbian Academy of Sciences and ArtsBelgradeSerbia
  2. 2.Physics Department, Solid State SectionAristotle University of ThessalonikiThessalonikiGreece
  3. 3.Department of ChemistryAristotle University of ThessalonikiThessalonikiGreece
  4. 4.Institute for Multidisciplinary ResearchBelgradeSerbia
  5. 5.ICTM, Center of ChemistryBelgradeSerbia
  6. 6.Faculty of Electrical EngineeringUniversity of BelgradeBelgradeSerbia

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