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Journal of Materials Science

, Volume 46, Issue 21, pp 6952–6959 | Cite as

Influence of substrate and selenization temperatures on the growth of Cu2SnSe3 films

  • G. Hema ChandraEmail author
  • O. Lakshmana Kumar
  • R. Prasada Rao
  • S. Uthanna
Article

Abstract

The effects of substrate temperature and selenization temperature on the structure, composition, electrical and optical properties of Cu2SnSe3 films were studied systematically. Cu2SnSe3 films deposited at various substrate temperatures (303–573 K) by the flash evaporation method are found to be non-stoichiometric. To compensate the selenium deficiency and obtain a single-phase, an annealing Cu2SnSe3 films deposited at 573 K was performed in selenium atmosphere. Cu2SnSe3 films deposited at a substrate temperature of 573 K and then selenized at 673 K were single phase and polycrystalline exhibiting monoclinic structure. The films showed p-type conductivity with a direct band gap of 0.84 eV.

Keywords

Selenium Electrical Resistivity Substrate Temperature Rietveld Refinement SnSe 

Notes

Acknowledgements

The authors are thankful to the Defence Research and Development Organization, New Delhi, India, for providing financial support to carry out the present research work.

Supplementary material

10853_2011_5661_MOESM1_ESM.doc (114 kb)
Supplementary material 1 (DOC 113 kb)

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Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • G. Hema Chandra
    • 1
    • 2
    Email author
  • O. Lakshmana Kumar
    • 1
  • R. Prasada Rao
    • 3
  • S. Uthanna
    • 4
  1. 1.Materials Science DivisionVIT UniversityVelloreIndia
  2. 2.INESC PortoPortoPortugal
  3. 3.Department of Materials Science and EngineeringNational University of SingaporeSingaporeSingapore
  4. 4.Thin Films Laboratory, Department of PhysicsSri Venkateswara UniversityTirupatiIndia

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