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Journal of Materials Science

, Volume 46, Issue 17, pp 5702–5708 | Cite as

Large strain response in acceptor- and donor-doped Bi0.5Na0.5TiO3-based lead-free ceramics

  • Jiaming Li
  • Feifei WangEmail author
  • Chung Ming Leung
  • Siu Wing Or
  • Yanxue Tang
  • Xinman Chen
  • Tao Wang
  • Xiaomei Qin
  • Wangzhou Shi
Article

Abstract

Effects of Fe and La addition on the dielectric, ferroelectric, and piezoelectric properties of Bi0.5Na0.5TiO3–Bi0.5Li0.5TiO3–BaTiO3–Mn ceramics were investigated. Similar to the doping effect in lead-based piezoelectric materials, here the Fe-doped ceramic created a hard effect with an improved mechanical quality factor (Qm) ~ 160, coercive field (Ec) ~ 2.9 kV/mm, decreased dielectric constant \( \left( {\varepsilon_{33}^{T} /\varepsilon_{0} } \right)\sim 80 3, \) and loss (tanδ) ~ 0.024 while the La-doped one indicated a soft feature with improved piezoelectric constant (d33) ~ 184 pC/N, \( \varepsilon_{33}^{T} /\varepsilon_{0} \,\sim { 983}, \) tanδ ~ 0.033, and decreased Ec ~ 2.46 kV/mm. In addition, the temperature dependence of the ferroelectric hysteresis loops and strain response under unipolar electric field was also studied. Around the depolarization temperature Td, large strain value was obtained with the normalized \( d_{33}^{*} \) up to ~1,000 pC/N, which was suggested originated from the development of the short-range order or non-polar phases in the ferroelectric matrix. All these would provide a new way to realize high piezoelectric response for practical application in different temperature scale.

Keywords

BaTiO3 Piezoelectric Property Morphotropic Phase Boundary Bismuth Titanate Mechanical Quality Factor 

Notes

Acknowledgements

This study was supported by the Science and Technology Commission of Shanghai Municipality (Grant No. 10ZR1422300 and 09520501000), Innovation Program of Shanghai Municipal Education Commission (09YZ151, 11YZ82, 11YZ83, and 11ZZ117), Shanghai Normal University Program (SK201026, PL929 and SK200708), National Natural Science Foundation of China (Grant No. 60807036), and Condensed Physics of Shanghai Normal University (Grant No. DZL712).

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Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • Jiaming Li
    • 1
  • Feifei Wang
    • 1
    Email author
  • Chung Ming Leung
    • 2
  • Siu Wing Or
    • 2
  • Yanxue Tang
    • 1
  • Xinman Chen
    • 1
  • Tao Wang
    • 1
  • Xiaomei Qin
    • 1
  • Wangzhou Shi
    • 1
  1. 1.Key Laboratory of Optoelectronic Material and DeviceMathematics & Science College, Shanghai Normal UniversityShanghaiChina
  2. 2.Department of Electrical EngineeringThe Hong Kong Polytechnic UniversityKowloonHong Kong

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