Journal of Materials Science

, Volume 46, Issue 7, pp 2001–2008 | Cite as

Compositional characterization of nickel silicides by HAADF-STEM imaging

  • E. Verleysen
  • H. Bender
  • O. Richard
  • D. Schryvers
  • W. Vandervorst
Article
First Online:
Received:
Accepted:
  • 162 Downloads

Abstract

A methodology for the quantitative compositional characterization of nickel silicides by high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging is presented. HAADF-STEM images of a set of nickel silicide reference samples Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2 are taken at identical experimental conditions. The correlation between sample thickness and HAADF-STEM intensity is discussed. In order to quantify the relationship between the experimental Z-contrast intensities and the composition of the analysed layers, the ratio of the HAADF-STEM intensity to the sample thickness or to the intensity of the silicon substrate is determined for each nickel silicide reference sample. Diffraction contrast is still detected on the HAADF-STEM images, even though the detector is set at the largest possible detection angle. The influence on the quantification results of intensity fluctuations caused by diffraction contrast and channelling is examined. The methodology is applied to FUSI gate devices and to horizontal TFET devices with different nickel silicides formed on source, gate and drain. It is shown that, if the elements which are present are known, this methodology allows a fast quantitative 2-dimensional compositional analysis.

Keywords

Electron Energy Loss Spectroscopy Ni3Si Diffraction Contrast High Angle Annular Dark Field Nickel Silicide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Notes

Acknowledgements

The authors would like to thank Daniele Leonelli (Imec, Leuven) for providing the TFET structures, Lars-Ake Ragnarsson (Imec, Leuven) for the FUSI structures, Jo Verbeeck (EMAT, Universiteit Antwerpen) for HAADF-STEM measurements with the JEOL 3000F microscope, Paola Favia (Imec, Leuven) for discussion on the STEM analysis and DM software, and Patricia Van Marcke (Imec, Leuven) for sample preparations.

References

  1. 1.
    Maex K, Van Rossum M (1995) Properties of metal silicides. INSPEC, LondonGoogle Scholar
  2. 2.
    Maex K (1993) Mater Sci Eng R11:53Google Scholar
  3. 3.
    Kittl JA, Lauwers A, van Dal MJH, Yu H, Veloso A, Hoffmann T, Pawlak MA, Demeurisse C, Kubicek S, Niwa M, Vrancken C, Absil P, Biesemans S (2006) ECS Trans 3:233CrossRefGoogle Scholar
  4. 4.
    Kittl JA, O’Sullivan BJ, Kaushik VS, Lauwers A, Pawlak MA, Hoffmann T, Demeurisse C, Vrancken C, Veloso A, Absil P, Biesemans S (2007) Appl Phys Lett 90:032103CrossRefGoogle Scholar
  5. 5.
    Gambino JP, Colgan EG (1998) Mater Chem Phys 52:99CrossRefGoogle Scholar
  6. 6.
    Lavoie C, d`Heurle FM, Detavernier C, Cabral C (2003) Microelectron Eng 70:144CrossRefGoogle Scholar
  7. 7.
    Shiojiri M, Yamazaki T (2003) Jeol News 38(2):54Google Scholar
  8. 8.
    Watanabe K, Yamazaki T, Kikuchi Y, Kotaka Y, Kawasaki M, Hashimoto I, Shiojiri M (2001) Phys Rev B 63:085316CrossRefGoogle Scholar
  9. 9.
    Verleysen E, Bender H, Schryvers D, Vandervorst W (2010) J Phys Conf Ser 209:012057CrossRefGoogle Scholar
  10. 10.
    Verleysen E, Bender H, Richard O, Schryvers D, Vandervorst W (2010) J Microsc 240:75. doi: 10.1111/j.1365-2818.2010.03391.x CrossRefGoogle Scholar
  11. 11.
    Pennycook SJ, Nellist PD (1999) Impact of electron microscopy on materials research. Kluwer Academic, DordrechtGoogle Scholar
  12. 12.
    Pennycook SJ, Jesson DE (1991) Ultramicroscopy 37:14CrossRefGoogle Scholar
  13. 13.
    Bonney LA (1990) In: Proceedings of the XIIth international congress for electron microscopy. San Francisco Press, San Francisco, p 74Google Scholar
  14. 14.
    Egerton RF (1986) Electron energy loss spectroscopy in the electron microscope. Plenum Press, New YorkGoogle Scholar
  15. 15.
    Meltzman H, Kauffmann Y, Thangadurai P, Drozdov M, Baram M, Brandon D, Kaplan WD (2009) J Microsc 236:165CrossRefGoogle Scholar
  16. 16.
    Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, De Gendt S, Heyns MM, Groeseneken G (2009) In: Extended abstracts solid state devices and materials conference, p 767Google Scholar
  17. 17.
    Leonelli D, Vandooren A, Rooyackers R, Verhulst AS, De Gendt S, Heyns MM, Groeseneken G (2010) Jpn J Appl Phys 49:04DC10CrossRefGoogle Scholar
  18. 18.
    Verhulst AS, Vandenberghe WG, Leonelli D, Rooyackers R, Vandooren A, De Gendt S, Heyns MM, Groeseneken G (2009) ECS Trans 25:455CrossRefGoogle Scholar
  19. 19.
    Verhulst AS, Sorée B, Leonelli D, Vandenberghe WG, Groeseneken G (2010) J Appl Phys 107:024518CrossRefGoogle Scholar
  20. 20.
    Cliff G, Lorimer GW (1975) J Microsc 103:203Google Scholar
  21. 21.
    Williams DB, Carter CB (1996) Transmission electron microscopy. Plenum Press, New YorkGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • E. Verleysen
    • 1
    • 2
  • H. Bender
    • 1
  • O. Richard
    • 1
  • D. Schryvers
    • 3
  • W. Vandervorst
    • 1
    • 2
  1. 1.ImecLeuvenBelgium
  2. 2.Instituut voor Kern-en Stralingsfysica, K. U. LeuvenLeuvenBelgium
  3. 3.EMAT, Universiteit AntwerpenAntwerpenBelgium

Personalised recommendations