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Journal of Materials Science

, Volume 45, Issue 1, pp 151–157 | Cite as

Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates

  • Beihai MaEmail author
  • Manoj Narayanan
  • Sheng Tong
  • U. Balachandran
Article

Abstract

We have grown ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films on Hastelloy C276 (HC) substrates by chemical solution deposition. Samples of 1.15-μm-thick PLZT films were prepared on HC with and without lanthanum nickel oxide (LNO) films as an intermediate buffer layer. On samples with and without LNO buffers at room temperature, we measured dielectric constants of ≈1,300 and ≈450 and loss tangents of ≈0.06 and ≈0.07, respectively. For PLZT films grown on HC with LNO buffer, the dielectric constant increases, while the dielectric loss decreases, with increasing temperature. A dielectric constant of ≈2,000 and loss of ≈0.05 were observed at 150 °C. Samples with LNO buffer also exhibited slimmer hysteresis loops and lower leakage current density when compared to samples without LNO buffer. The following results were measured on samples with and without LNO buffers: remanent polarization (Pr) values of 21.3 and 36.4 μC/cm2, coercive electric field (Ec) values of 41 and 173 kV/cm, and leakage current densities of ≈1.1 × 10−8 and ≈1.6 × 10−7 A/cm2, respectively. The energy storage capability was measured at ≈65 J/cm3 for the PLZT film-on-foil capacitor deposited on HC with LNO buffer.

Keywords

Dielectric Loss Print Circuit Board Leakage Current Density Remanent Polarization Chemical Solution Deposition 

Notes

Acknowledgements

This work was funded by the U.S. Department of Energy, Office of Vehicle Technologies Program, under Contract DE-AC02-06CH11357. This work benefited from the use of the Electron Microscopy Center (EMC) at Argonne National Laboratory. The authors would like to thank Dr. R. E. Koritala at EMC for her help with scanning electron microscopy. Authors also like to thank Dr. Selvamanickam at IGC-SuperPower for providing HC substrates.

References

  1. 1.
    Haertling GH, Land CE (1971) J Am Ceram Soc 54:1CrossRefGoogle Scholar
  2. 2.
    Xia F, Yao X (1999) J Mater Sci 34:3341. doi: https://doi.org/10.1023/A:1004672813514 CrossRefGoogle Scholar
  3. 3.
    Uchiyama K, Kasamatsu A, Otani Y, Shiosaki T (2007) Jpn J Appl Phys 46:L244CrossRefGoogle Scholar
  4. 4.
    Guttler B, Bismayer U, Groves P, Salje E (1995) Semicond Sci Technol 10:245CrossRefGoogle Scholar
  5. 5.
    Ma B, Kwon DK, Narayanan M, Balachandran U (2008) Mater Lett 62:3573CrossRefGoogle Scholar
  6. 6.
    Kandasamy S, Ghantasala MK, Holland A, Li YX, Bliznyuk V, Wlodarski W, Mitchell A (2008) Mater Lett 62:370CrossRefGoogle Scholar
  7. 7.
    Ihlefeld J, Laughlin B, Hunt-Lowery A, Borland W, Kingon A, Maria JP (2005) J Electroceram 14:95CrossRefGoogle Scholar
  8. 8.
    Kingon AI, Srinivasan S (2005) Nat Mater 4:233CrossRefGoogle Scholar
  9. 9.
    Zhao H-J, Ren T-L, Zhang N-X, Zuo R-Z, Wang X-H, Liu L-T, Li Z-J, Gui Z-L, Li L-T (2003) Mater Sci Eng B99:195CrossRefGoogle Scholar
  10. 10.
    Kong LB, Ma J (2002) Mater Lett 56:30CrossRefGoogle Scholar
  11. 11.
    Seveno R, Gundel HW, Seifert S (2001) Appl Phys Lett 79:4204CrossRefGoogle Scholar
  12. 12.
    Ma B, Narayanan M, Balachandran U (2009) Mater Lett 63:1353CrossRefGoogle Scholar
  13. 13.
    Ma B, Kwon DK, Narayanan M, Balachandran U (2009) Mater Res Bull 44:11CrossRefGoogle Scholar
  14. 14.
    Narayanan M, Kwon DK, Ma B, Balachandran U (2008) Appl Phys Lett 92:252905CrossRefGoogle Scholar
  15. 15.
    Seifert S, Sporn D, Hauke T, Muller G, Beige H (2004) J Eur Ceram Soc 24:2553CrossRefGoogle Scholar
  16. 16.
    Zou Q, Ruda HE, Yacobi BG (2001) Appl Phys Lett 78:1282CrossRefGoogle Scholar
  17. 17.
    Ma B, Kwon DK, Narayanan M, Balachandran U (2009) J Electroceram 22:383CrossRefGoogle Scholar
  18. 18.
    Jonscher K (1983) Dielectric relaxation in solids. Chelsea Dielectrics Press, LondonGoogle Scholar
  19. 19.
    Chen J, He L, Che L, Meng Z (2006) Thin Solid Films 515:2398CrossRefGoogle Scholar
  20. 20.
    Kim T, Hanson JN, Gruverman A, Kingon AI (2006) Appl Phys Lett 88:262907CrossRefGoogle Scholar
  21. 21.
    Narayanan M et al (2009) Appl Phys Lett (to be submitted)Google Scholar

Copyright information

© U.S. Department of Energy, Argonne National Laboratory 2009

Authors and Affiliations

  • Beihai Ma
    • 1
    Email author
  • Manoj Narayanan
    • 1
  • Sheng Tong
    • 1
  • U. Balachandran
    • 1
  1. 1.Energy Systems DivisionArgonne National LaboratoryArgonneUSA

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