Advertisement

Journal of Materials Science

, Volume 45, Issue 1, pp 130–135 | Cite as

Post-growth annealing and wide bandgap modulation of BeZnO layers grown by RF co-sputtering of ZnO and Be targets

  • J. H. Yu
  • D. S. Park
  • J. H. Kim
  • T. S. Jeong
  • C. J. YounEmail author
  • K. J. Hong
Article

Abstract

ZnO based oxide system BexZn1−xO alloy of various compositions has been successfully grown by the RF co-sputtering method. The crystallinity of the BexZn1−xO alloys has been remarkably improved after the post-annealing at 600 °C compared with the BexZn1−xO alloys post-annealed at other temperatures. The x value of the BexZn1−xO layers has been increased from 0.022 to 0.17 by adjusting the RF-power of the Be target. Also, the optical bandgap energy has been modulated from 3.2218 to 3.7978 eV, respectively. Based on our results, a bandgap bowing parameter of BexZn1−xO alloy has been extracted out to be 4.5 eV. These findings could be useful to fabricate the ZnO/BexZn1−xO quantum structures and bandgap modulation for deep ultraviolet-light-emitting diodes.

Keywords

Rapid Thermal Annealing Alloy Film Optical Bandgap Energy Optical Transmission Spectrum Bandgap Modulation 

Notes

Acknowledgement

This work was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-005-J00302).

References

  1. 1.
    Chang SP, Chang SJ, Chiou YZ, Lu CY, Lin TK, Lin YC, Kuo CF, Chang HM (2007) J Electrochem Soc 154:J209CrossRefGoogle Scholar
  2. 2.
    Ohtomo A, Kawasaki M, Koida T, Masubuchi K, Koinuma H, Sakurai Y, Yoshida Y, Yasuda T, Segawa Y (1998) Appl Phys Lett 72:2466CrossRefGoogle Scholar
  3. 3.
    Choopun S, Vispute RD, Yang W, Sharma RP, Venkatesan T, Shen H (2002) Appl Phys Lett 80:1529CrossRefGoogle Scholar
  4. 4.
    Ryu YR, Lee TS, Lubguban JA, White HW, Leem JH, Han MS, Park YS, Youn CJ, Kim WJ (2006) Appl Phys Lett 88:052103CrossRefGoogle Scholar
  5. 5.
    Waag A, Fischer F, Lugauer HJ, Litz Th, Laubender J, Lenz U, Zehnder U, Ossau W, Gerhardt T, Möller M, Landwehr G (1996) J Appl Phys 80:792CrossRefGoogle Scholar
  6. 6.
    Ding SF, Fan GH, Li ST, Chen K, Xiao B (2007) Physica B 394:127CrossRefGoogle Scholar
  7. 7.
    Van Vechten JA, Bergstresser TK (1970) Phys Rev B 1:3351CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • J. H. Yu
    • 1
  • D. S. Park
    • 1
  • J. H. Kim
    • 1
  • T. S. Jeong
    • 1
  • C. J. Youn
    • 1
    Email author
  • K. J. Hong
    • 2
  1. 1.Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical EngineeringChonbuk National UniversityJeonjuSouth Korea
  2. 2.Department of PhysicsChosun UniversityGwangjuSouth Korea

Personalised recommendations