Post-growth annealing and wide bandgap modulation of BeZnO layers grown by RF co-sputtering of ZnO and Be targets
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ZnO based oxide system BexZn1−xO alloy of various compositions has been successfully grown by the RF co-sputtering method. The crystallinity of the BexZn1−xO alloys has been remarkably improved after the post-annealing at 600 °C compared with the BexZn1−xO alloys post-annealed at other temperatures. The x value of the BexZn1−xO layers has been increased from 0.022 to 0.17 by adjusting the RF-power of the Be target. Also, the optical bandgap energy has been modulated from 3.2218 to 3.7978 eV, respectively. Based on our results, a bandgap bowing parameter of BexZn1−xO alloy has been extracted out to be 4.5 eV. These findings could be useful to fabricate the ZnO/BexZn1−xO quantum structures and bandgap modulation for deep ultraviolet-light-emitting diodes.
KeywordsRapid Thermal Annealing Alloy Film Optical Bandgap Energy Optical Transmission Spectrum Bandgap Modulation
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-005-J00302).