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Journal of Materials Science

, Volume 45, Issue 1, pp 124–129 | Cite as

Direct detection of electron spins and doping effects in spin-polarized electron transport in gallium arsenide

  • M. Idrish MiahEmail author
Article
  • 79 Downloads

Abstract

The spin Hall effect allows the direct detection of spins in semiconductors. In this study, electron spins in n-doped gallium arsenide are detected and the effects of n-type doping in gallium arsenide under drift are studied. It is found that the effects in the spin-polarized electron transport increase with increasing doping density in the moderate range, indicating that the introduction of n-type dopants increases the electron-spin lifetimes in gallium arsenide. However, the transport drifting by a high field shows no effects because of destroying the electron-spin polarization in n-doped gallium arsenide. The results are discussed in details.

Keywords

Quantum Well Spin Relaxation Gallium Arsenide Spin Precession Doping Density 

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.Queensland Micro- and Nanotechnology CentreGriffith UniversityNathan, BrisbaneAustralia
  2. 2.School of Biomolecular and Physical SciencesGriffith UniversityNathan, BrisbaneAustralia
  3. 3.Department of PhysicsUniversity of ChittagongChittagongBangladesh

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