Journal of Materials Science

, Volume 44, Issue 23, pp 6333–6337 | Cite as

Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon

  • C. J. Arendse
  • G. F. MalgasEmail author
  • T. F. G. Muller
  • B. A. van Heerden
  • D. Knoesen


We report on the thermal stability of the optical band gap and structural disorder in hot-wire-deposited a-Si:H with different atomic hydrogen concentrations. Furthermore, the changes in the structural disorder will be correlated with the changes in the optical band gap. Raman spectroscopy shows evidence that no crystallization is induced at temperatures below 550 °C and that the structural disorder increases upon annealing. The increase in the structural disorder results in a broadening of the valence and conduction band tails, thereby pinning the valence and conduction band edges closer together, resulting in a decrease in the optical band gap. Hydrogen evolution occurs at 400 °C via the release of molecular hydrogen trapped in voids, which results in the blistering of the sample surface.


Molecular Hydrogen Amorphous Silicon Structural Disorder Isochronal Annealing Device Quality 



The authors acknowledge the financial support of the National Research Foundation of South Africa (GUN. 2050646). The authors are especially thankful to Dr. Anke Brockhoff, formerly of the Debye Institute of Utrecht University, for the Raman spectroscopy measurements.


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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • C. J. Arendse
    • 1
  • G. F. Malgas
    • 2
    Email author
  • T. F. G. Muller
    • 1
  • B. A. van Heerden
    • 1
  • D. Knoesen
    • 1
  1. 1.Department of PhysicsUniversity of the Western CapeBellvilleSouth Africa
  2. 2.National Centre for Nano-Structured MaterialsCouncil for Scientific and Industrial ResearchPretoriaSouth Africa

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