Journal of Materials Science

, Volume 44, Issue 19, pp 5274–5287 | Cite as

Interface effects on highly epitaxial ferroelectric thin films

  • Y. Lin
  • C. L. Chen


Interface effects have been found to play a key role in controlling the epitaxial nature and physical properties on the highly epitaxial ferroelectric thin films. Thin film ferroelectrics are dominantly affected by the strains induced by lattice misfits between the films and the substrates, surface step terrace, both step height and terrace dimension, and the surface terminations. The natures of interface induced local strain formations, edge dislocations, and antiphase domain boundaries are reviewed in this article.


BaTiO3 Edge Dislocation Select Area Electron Diffraction Pattern Misfit Dislocation Barium Strontium Titanate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



The authors gratefully acknowledge the support of the National Science Foundation, the Department of Energy, the Army Research Office, the Texas Higher Education ARP Program, and the State of Texas through the TcSUH at University of Houston.


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© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science & Technology of ChinaChengduPeople’s Republic of China
  2. 2.Department of Physics and AstronomyUniversity of Texas at San AntonioSan AntonioUSA

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