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Journal of Materials Science

, Volume 44, Issue 19, pp 5318–5324 | Cite as

Effect of film thickness on ferroelectric domain structure and properties of Pb(Zr0.35Ti0.65)O3/SrRuO3/SrTiO3 heterostructures

  • Hitoshi MoriokaEmail author
  • Keisuke Saito
  • Shintaro Yokoyama
  • Takahiro Oikawa
  • Toshiyuki Kurosawa
  • Hiroshi FunakuboEmail author
Ferroelectrics

Abstract

Epitaxial Pb(Zr0.35Ti0.65)O3 (PZT) thin films with tetragonal symmetry and thicknesses ranging from 45 to 230 nm were grown at 540 °C on SrRuO3-coated (001)SrTiO3 substrates by pulse-injected metalorganic chemical vapor deposition. The effect of the film thickness on the ferroelectric domain structure and the dielectric and ferroelectric properties were systematically investigated. Domain structure analysis of epitaxial PZT films was accomplished with high-resolution X-ray diffraction reciprocal space mapping and high-resolution transmission electron microscopy. Fully polar-axis (c-axis)-oriented epitaxial PZT thin films with high ferroelectric polarization values [e.g., remanent polarization (Pr) ~ 90 μC/cm2] were observed for film thicknesses below 70 nm. Films thicker than 70 nm had a c/a/c/a polydomain structure and the relative volume fraction of c-domains monotonously decreased to about 72% on increasing the film thickness up to 230 nm , and finally Pr diminished to about 64 μC/cm2 for the 230-nm-thick epitaxial film. These polarization values were in good agreement with the estimated values taking into account the volume fraction of the c-axis-oriented domains while assuming a negligible contribution of 90° domain reorientation caused by an externally applied electric field.

Keywords

Remanent Polarization Ferroelectric Polarization Reciprocal Space Mapping SrTiO3 Substrate Ferroelectric Domain Structure 

Notes

Acknowledgements

This research was carried out under the auspices of a Grant-in-Aid for Science Research on Priority Area (B) “Control of Material Property of Ferroelectric Thin Films and Their Application to a Next-Generation Memory Device.” One of the authors (HM) would like to thank H. Miyazawa, Seiko-Epson Ltd., for useful advice on the theoretical calculation of the remanent polarization of PZT, M. Tanaka and Y. Miyamoto for TEM observations and fruitful discussions, and Prof. J. S. Cross, Tokyo Institute of Technology, for fruitful discussions.

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Hitoshi Morioka
    • 1
    • 3
    Email author
  • Keisuke Saito
    • 1
  • Shintaro Yokoyama
    • 3
  • Takahiro Oikawa
    • 3
  • Toshiyuki Kurosawa
    • 2
  • Hiroshi Funakubo
    • 3
    Email author
  1. 1.Application LaboratoryBruker AXSYokohamaJapan
  2. 2.Bruker AXSYokohamaJapan
  3. 3.Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and EngineeringTokyo Institute of TechnologyYokohamaJapan

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